Nissan Ifat, Kumar Vijay Bhooshan, Porat Ze'ev, Makovec Darko, Shefi Orit, Gedanken Aharon
Department of Chemistry, Bar-Ilan University, Ramat Gan 5290002, Israel.
J Mater Chem B. 2017 Feb 21;5(7):1371-1379. doi: 10.1039/c6tb02508k. Epub 2017 Jan 30.
In this paper, we report the fabrication of an antibacterial material, Ga-doped C-dots on Ga nanoparticles (Ga@C-dots@Ga NPs), which is deposited on a glass substrate for neural growth. A one-step sonochemical process is applied for the simultaneous fabrication and coating of Ga@C-dots@Ga NPs using PEG 400 and molten gallium. The physical and chemical characteristics of the synthesized materials were studied using scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), fluorescence analysis, dynamic light scattering (DLS) and other techniques. SH-SY5Y cells were plated on the substrates. The effect of the Ga@C-dots@Ga NPs on the development of neurites during the initiation and elongation growth phases was studied and compared with C-dots, Ga@C-dots and Ga NPs. Our research focuses on the influence of the physical and chemical properties of composites on neurite growth. We observed that cells grown on a Ga@C-dots@Ga-coated substrate exhibit a 97% increase in the number of branches originating from the soma. We found that surface modification and particle morphology play a significant role in the neural growth.
在本文中，我们报道了一种抗菌材料的制备，即负载于玻璃基底上用于神经生长的镓纳米颗粒包覆镓掺杂碳点（Ga@C-dots@Ga NPs）。采用一步超声化学法，使用聚乙二醇400（PEG 400）和熔融镓同时制备并包覆Ga@C-dots@Ga NPs。利用扫描电子显微镜（SEM）、透射电子显微镜（TEM）、能量色散X射线光谱（EDS）、荧光分析、动态光散射（DLS）等技术研究了合成材料的物理和化学特性。将SH-SY5Y细胞接种于基底上。研究了Ga@C-dots@Ga NPs在神经突起始和伸长生长阶段对神经突发育的影响，并与碳点、Ga@C-dots和Ga NPs进行了比较。我们的研究重点是复合材料的物理和化学性质对神经突生长的影响。我们观察到，在Ga@C-dots@Ga包覆基底上生长的细胞，其源自胞体的分支数量增加了97%。我们发现表面修饰和颗粒形态在神经生长中起着重要作用。
