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用于在柔性衬底上制备高性能热电薄膜的n型Bi(SeTe)纳米片的溶剂热合成法。

Solvothermal synthesis of n-type Bi(SeTe) nanoplates for high-performance thermoelectric thin films on flexible substrates.

作者信息

Kimura Yuki, Mori Ryotaro, Yonezawa Susumu, Yabuki Hayato, Namiki Hiromasa, Ota Yuichi, Takashiri Masayuki

机构信息

Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa, 259-1292, Japan.

Tokyo Metropolitan Industrial Technology Research Institute, 2-4-10, Aomi, Koto-ku, Tokyo, 135-0064, Japan.

出版信息

Sci Rep. 2020 Apr 14;10(1):6315. doi: 10.1038/s41598-020-63374-0.

Abstract

To improve thermoelectric performance of materials, the utilization of low-dimensional materials with a multi-alloy system is a promising approach. We report on the enhanced thermoelectric properties of n-type Bi(SeTe) nanoplates using solvothermal synthesis by tuning the composition of selenium (Se). Variation of the Se composition within nanoplates is demonstrated using X-ray diffraction and electron probe microanalysis. The calculated lattice parameters closely followed Vegard's law. However, when the Se composition was extremely high, an impurity phase was observed. At a reduced Se composition, regular-hexagonal-shaped nanoplates with a size of approximately 500 nm were produced. When the Se composition was increased, the shape distribution became random with sizes more than 5 μm. To measure the thermoelectric properties, nanoplate thin films (NPTs) were formed on a flexible substrate using drop-casting, followed by thermal annealing. The resulting NPTs sufficiently adhered to the substrate during the bending condition. The electrical conductivity of the NPTs increased with an increase in the Se composition, but it rapidly decreased at an extremely high Se composition because of the presence of the impurity phase. As a result, the Bi(SeTe) NPTs exhibited the highest power factor of 4.1 μW/(cm∙K) at a Se composition of x = 0.75. Therefore, it was demonstrated that the thermoelectric performance of Bi(SeTe) nanoplates can be improved by tuning the Se composition.

摘要

为了提高材料的热电性能,利用具有多合金体系的低维材料是一种很有前景的方法。我们报道了通过溶剂热合成法调节硒(Se)的组成来增强n型Bi(SeTe)纳米片的热电性能。利用X射线衍射和电子探针微分析证明了纳米片内Se组成的变化。计算得到的晶格参数与维加德定律密切相符。然而,当Se组成极高时,观察到了杂质相。在较低的Se组成下,制备出了尺寸约为500nm的规则六边形纳米片。当Se组成增加时,形状分布变得随机,尺寸超过5μm。为了测量热电性能,采用滴铸法在柔性衬底上形成纳米片薄膜(NPTs),然后进行热退火。所得的NPTs在弯曲条件下能充分粘附在衬底上。NPTs的电导率随着Se组成的增加而增加,但在极高的Se组成下由于杂质相的存在而迅速下降。结果,Bi(SeTe) NPTs在Se组成为x = 0.75时表现出最高功率因子4.1 μW/(cm∙K)。因此,证明了通过调节Se组成可以提高Bi(SeTe)纳米片的热电性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/21cb/7156490/d27258bcbfee/41598_2020_63374_Fig1_HTML.jpg

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