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拓扑半金属纳米结构:从性质到拓扑电子学

Topological Semimetal Nanostructures: From Properties to Topotronics.

作者信息

Wang An-Qi, Ye Xing-Guo, Yu Da-Peng, Liao Zhi-Min

机构信息

State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.

Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.

出版信息

ACS Nano. 2020 Apr 28;14(4):3755-3778. doi: 10.1021/acsnano.9b07990. Epub 2020 Apr 14.

Abstract

Characterized by bulk Dirac or Weyl cones and surface Fermi-arc states, topological semimetals have sparked enormous research interest in recent years. The nanostructures, with large surface-to-volume ratio and easy field-effect gating, provide ideal platforms to detect and manipulate the topological quantum states. Exotic physical properties originating from these topological states endow topological semimetals attractive for future topological electronics (topotronics). For example, the linear energy dispersion relation is promising for broadband infrared photodetectors, the spin-momentum locking nature of topological surface states is valuable for spintronics, and the topological superconductivity is highly desirable for fault-tolerant qubits. For real-life applications, topological semimetals in the form of nanostructures are necessary in terms of convenient fabrication and integration. Here, we review the recent progresses in topological semimetal nanostructures and start with the quantum transport properties. Then topological semimetal-based electronic devices are introduced. Finally, we discuss several important aspects that should receive great effort in the future, including controllable synthesis, manipulation of quantum states, topological field effect transistors, spintronic applications, and topological quantum computation.

摘要

拓扑半金属以体狄拉克锥或外尔锥以及表面费米弧态为特征,近年来引发了巨大的研究兴趣。具有大的表面积与体积比且易于进行场效应门控的纳米结构,为检测和操纵拓扑量子态提供了理想平台。源自这些拓扑态的奇异物理性质使拓扑半金属对未来的拓扑电子学(拓扑ronics)具有吸引力。例如,线性能量色散关系对宽带红外光电探测器很有前景,拓扑表面态的自旋 - 动量锁定特性对自旋电子学很有价值,而拓扑超导性对于容错量子比特是非常理想的。对于实际应用而言,纳米结构形式的拓扑半金属在便于制造和集成方面是必要的。在此,我们回顾拓扑半金属纳米结构的最新进展,并从量子输运性质开始。然后介绍基于拓扑半金属的电子器件。最后,我们讨论未来应大力关注的几个重要方面,包括可控合成、量子态操纵、拓扑场效应晶体管、自旋电子学应用以及拓扑量子计算。

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