Jin Gangtae, Multunas Christian D, Hart James L, Kiani Mehrdad T, Duong Nghiep Khoan, Sam Quynh P, Wang Han, Cheon Yeryun, Hynek David J, Han Hyeuk Jin, Sundararaman Ravishankar, Cha Judy J
Department of Electronic Engineering, Gachon University, Seongnam, 13120, South Korea.
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
Nat Commun. 2024 Jul 13;15(1):5889. doi: 10.1038/s41467-024-50323-y.
Topological materials confined in 1D can transform computing technologies, such as 1D topological semimetals for nanoscale interconnects and 1D topological superconductors for fault-tolerant quantum computing. As such, understanding crystallization of 1D-confined topological materials is critical. Here, we demonstrate 1D template-assisted nanowire synthesis where we observe diameter-dependent phase selectivity for tungsten phosphides. A phase bifurcation occurs to produce tungsten monophosphide and tungsten diphosphide at the cross-over nanowire diameter regime of 35-70 nm. Four-dimensional scanning transmission electron microscopy is used to identify the two phases and to map crystallographic orientations of grains at a few nm resolution. The 1D-confined phase selectivity is attributed to the minimization of the total surface energy, which depends on the nanowire diameter and chemical potentials of precursors. Theoretical calculations are carried out to construct the diameter-dependent phase diagram, which agrees with experimental observations. Our findings suggest a crystallization route to stabilize topological materials confined in 1D.
一维受限拓扑材料能够变革计算技术，例如用于纳米级互连的一维拓扑半金属以及用于容错量子计算的一维拓扑超导体。因此，了解一维受限拓扑材料的结晶过程至关重要。在此，我们展示了一维模板辅助纳米线合成，在此过程中我们观察到磷化钨的直径依赖性相选择性。在35 - 70纳米的交叉纳米线直径范围内会发生相分叉，生成一磷化钨和二磷化钨。利用四维扫描透射电子显微镜来识别这两个相，并以几纳米的分辨率绘制晶粒的晶体取向图。一维受限相选择性归因于总表面能的最小化，而总表面能取决于纳米线直径和前驱体的化学势。进行了理论计算以构建直径依赖性相图，该相图与实验观察结果相符。我们的研究结果提出了一条使一维受限拓扑材料稳定的结晶途径。
