Persano Anna, Quaranta Fabio, Taurino Antonietta, Siciliano Pietro Aleardo, Iannacci Jacopo
IMM-CNR, Institute for Microelectronics and Microsystems, National Research Council, Via Monteroni, 73100 Lecce, Italy.
CMM-FBK, Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo - Trento, Italy.
Sensors (Basel). 2020 Apr 10;20(7):2133. doi: 10.3390/s20072133.
In this work, SiN/a-Si/SiN caps on conductive coplanar waveguides (CPWs) are proposed for thin film encapsulation of radio-frequency microelectromechanical systems (RF MEMS), in view of the application of these devices in fifth generation (5G) and modern telecommunication systems. Simplification and cost reduction of the fabrication process were obtained, using two etching processes in the same barrel chamber to create a matrix of holes through the capping layer and to remove the sacrificial layer under the cap. Encapsulating layers with etch holes of different size and density were fabricated to evaluate the removal of the sacrificial layer as a function of the percentage of the cap perforated area. Barrel etching process parameters also varied. Finally, a full three-dimensional finite element method-based simulation model was developed to predict the impact of fabricated thin film encapsulating caps on RF performance of CPWs.
在这项工作中，鉴于射频微机电系统（RF MEMS）在第五代（5G）和现代电信系统中的应用，提出了用于导电共面波导（CPW）的SiN/a-Si/SiN帽，以对其进行薄膜封装。通过在同一桶式腔室中使用两种蚀刻工艺，简化了制造工艺并降低了成本，这两种蚀刻工艺用于在覆盖层中形成孔矩阵，并去除帽下方的牺牲层。制造了具有不同尺寸和密度蚀刻孔的封装层，以评估牺牲层的去除情况与帽穿孔面积百分比之间的函数关系。桶式蚀刻工艺参数也有所不同。最后，开发了一个基于全三维有限元方法的仿真模型，以预测制造的薄膜封装帽对CPW射频性能的影响。
