特刊：纳米线场效应晶体管（FET）。
Special Issue: Nanowire Field-Effect Transistor (FET).
作者信息
Seoane Natalia, García-Loureiro Antonio, Kalna Karol
机构信息
Centro Singular de Investigación en Tecnoloxías Intelixentes, University of Santiago de Compostela, 15782 Santiago de Compostela, Spain.
Nanoelectronic Devices Computational Group, College of Engineering, Swansea University, Swansea SA1 8EN, Wales, UK.
出版信息
Materials (Basel). 2020 Apr 14;13(8):1845. doi: 10.3390/ma13081845.
Abstract
This Special Issue looks at recent developments in the research field of Nanowire Field-Effect Transistors (NW-FETs), covering different aspects of technology, physics, and modelling of these nanoscale devices. In this summary, we present seven outstanding articles on NW-FETs by providing a brief overview of the articles' content.
摘要
本期特刊关注纳米线场效应晶体管（NW-FET）研究领域的最新进展，涵盖了这些纳米级器件在技术、物理和建模等不同方面的内容。在本综述中，我们通过简要概述文章内容，介绍了七篇关于NW-FET的优秀文章。
相似文献
1
Special Issue: Nanowire Field-Effect Transistor (FET).特刊：纳米线场效应晶体管（FET）。
Materials (Basel). 2020 Apr 14;13(8):1845. doi: 10.3390/ma13081845.
2
Flexible, low-voltage, and low-hysteresis PbSe nanowire field-effect transistors.柔性、低电压、低滞后的 PbSe 纳米线场效应晶体管。
ACS Nano. 2011 Dec 27;5(12):10074-83. doi: 10.1021/nn203948x. Epub 2011 Nov 21.
3
Graphene and nanowire transistors for cellular interfaces and electrical recording.用于细胞界面和电记录的石墨烯和纳米线晶体管。
Nano Lett. 2010 Mar 10;10(3):1098-102. doi: 10.1021/nl1002608.
4
Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate.通过纳米尺度部分栅极抑制短沟道 InAs 纳米线场效应晶体管的过关电流。
Nanotechnology. 2018 Oct 12;29(41):415203. doi: 10.1088/1361-6528/aad67c. Epub 2018 Jul 27.
5
Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.单个硅纳米线内固有掺杂梯度上的多个肖特基势垒限制场效应晶体管。
ACS Appl Mater Interfaces. 2017 Apr 5;9(13):12046-12053. doi: 10.1021/acsami.7b00144. Epub 2017 Mar 23.
6
Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.具有聚合物栅极电介质的直接组装氧化锌纳米线场效应晶体管的制备与表征
J Nanosci Nanotechnol. 2007 Nov;7(11):4101-5.
7
Ambipolar and unipolar PbSe nanowire field-effect transistors.双极和单极 PbSe 纳米线场效应晶体管。
ACS Nano. 2011 Apr 26;5(4):3230-6. doi: 10.1021/nn200348p. Epub 2011 Mar 21.
8
Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor.全栅InAs纳米线金属氧化物半导体场效应晶体管中高度可栅极调谐的Rashba自旋轨道相互作用
Sci Rep. 2017 Apr 19;7(1):930. doi: 10.1038/s41598-017-01080-0.
9
Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier.基于全方位栅极工程电荷等离子体纳米线场效应晶体管的共源放大器的实现
Micromachines (Basel). 2023 Jun 30;14(7):1357. doi: 10.3390/mi14071357.
10
Silicon Nanowire Field Effect Transistor Sensors with Minimal Sensor-to-Sensor Variations and Enhanced Sensing Characteristics.硅纳米线场效应晶体管传感器具有最小的传感器间差异和增强的传感特性。
ACS Nano. 2018 Jul 24;12(7):6577-6587. doi: 10.1021/acsnano.8b01339. Epub 2018 Jul 5.
引用本文的文献
1
Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance.探索用于增强性能的、在应变沟道圆柱形纳米线场效应晶体管上具有栅极堆叠的欠重叠诱导高k间隔层。
Sci Rep. 2024 Feb 5;14(1):2902. doi: 10.1038/s41598-024-53487-1.
2
Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances.用于探索和分析增强性能的 II 型异质-圆柱栅全环绕纳米线 FET 的演变。
Sci Rep. 2023 Jul 14;13(1):11415. doi: 10.1038/s41598-023-38239-x.
本文引用的文献
1
Effects of Applied Voltages on the Charge Transport Properties in a ZnO Nanowire Field Effect Transistor.施加电压对氧化锌纳米线场效应晶体管中电荷输运特性的影响。
Materials (Basel). 2020 Jan 7;13(2):268. doi: 10.3390/ma13020268.
2
Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors.用于纳米线场效应晶体管建模的非弹性相互作用的量子处理
Materials (Basel). 2019 Dec 21;13(1):60. doi: 10.3390/ma13010060.
3
A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs.一种用于研究纳米线场效应晶体管性能和变异性的多方法仿真工具箱。
Materials (Basel). 2019 Jul 26;12(15):2391. doi: 10.3390/ma12152391.
4
Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits.随机纳米尺寸氮化钛晶粒引起的动态功率延迟的特征波动以及全栅纳米线CMOS器件和电路的纵横比效应
Materials (Basel). 2019 May 8;12(9):1492. doi: 10.3390/ma12091492.
5
Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors.硅纳米线晶体管中电离杂质散射对总迁移率影响的模拟
Materials (Basel). 2019 Jan 2;12(1):124. doi: 10.3390/ma12010124.
6
InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities.通过在氧化物腔中选择性生长直接集成在硅上的铟镓砷鳍式场效应晶体管。
Materials (Basel). 2018 Dec 27;12(1):87. doi: 10.3390/ma12010087.
7
Physics of Discrete Impurities under the Frameworkof Device Simulations for Nanostructure Devices.纳米结构器件器件模拟框架下的离散杂质物理学
Materials (Basel). 2018 Dec 16;11(12):2559. doi: 10.3390/ma11122559.
Zotero 插件