Ruffino Francesco, Censabella Maria, Piccitto Giovanni, Grimaldi Maria Grazia
Dipartimento di Fisica e Astronomia "Ettore Majorana", Università di Catania, MATIS CNR-IMM, via S. Sofia 64, 95123 Catania, Italy.
Micromachines (Basel). 2020 Apr 14;11(4):410. doi: 10.3390/mi11040410.
Bimetallic Au/Pd nanoscale-thick films were sputter-deposited at room temperature on a silicon carbide (SiC) surface, and the surface-morphology evolution of the films versus thickness was studied with scanning electron microscopy. This study allowed to elucidate the Au/Pd growth mechanism by identifying characteristic growth regimes, and to quantify the characteristic parameters of the growth process. In particular, we observed that the Au/Pd film initially grew as three-dimensional clusters; then, increasing Au/Pd film thickness, film morphology evolved from isolated clusters to partially coalesced wormlike structures, followed by percolation morphology, and, finally, into a continuous rough film. The application of the interrupted coalescence model allowed us to evaluate a critical mean cluster diameter for partial coalescence, and the application of Vincent's model allowed us to quantify the critical Au/Pd coverage for percolation transition.
在室温下，通过溅射沉积法在碳化硅（SiC）表面制备了双金属Au/Pd纳米厚膜，并利用扫描电子显微镜研究了薄膜表面形貌随厚度的演变。通过识别特征生长模式，该研究有助于阐明Au/Pd的生长机制，并量化生长过程的特征参数。具体而言，我们观察到Au/Pd薄膜最初以三维团簇的形式生长；然后，随着Au/Pd薄膜厚度的增加，薄膜形貌从孤立的团簇演变为部分合并的蠕虫状结构，接着是渗流形貌，最后形成连续的粗糙薄膜。应用间断合并模型使我们能够评估部分合并的临界平均团簇直径，而Vincent模型的应用则使我们能够量化渗流转变的临界Au/Pd覆盖率。
