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通过种子介导生长提高近距离升华处理硫化锑太阳能电池的性能。

Enhanced Performance of Close-Spaced Sublimation Processed Antimony Sulfide Solar Cells via Seed-Mediated Growth.

作者信息

Wu Wentao, Tang Bo, Wan Lei, Mao Xiaoli, Wang Haolin, Tong Guoqing, Chen Tao, Zhou Ru

机构信息

School of Electrical Engineering and Automation, Hefei University of Technology, Hefei, 230009, P. R. China.

School of Physics, Hefei University of Technology, Hefei, 230009, P. R. China.

出版信息

Adv Sci (Weinh). 2024 Dec;11(46):e2409312. doi: 10.1002/advs.202409312. Epub 2024 Oct 21.

Abstract

Antimony sulfide (SbS) has attracted much attention due to its great prospect to construct highly efficient, cost-effective, and environment-friendly solar cells. The scalable close-spaced sublimation (CSS) is a well-developed physical deposition method to fabricate thin films for photovoltaics. However, the CSS-processed absorber films typically involve small grain size with high-density grain boundaries (GBs), resulting in severe defects-induced charge-carrier nonradiative recombination and further large open-circuit voltage (V) losses. In this work, it is demonstrated that a chemical bath deposited-SbS seed layer can serve as crystal nuclei and mediate the growth of large-grained, highly compact CSS-processed SbS films. This seed-mediated SbS film affords reduced defect density and enhanced charge-carrier transport, which yields an improved power conversion efficiency (PCE) of 4.78% for planar SbS solar cells. Moreover, the V of 0.755 V that is obtained is the highest reported thus far for vacuum-based evaporation and sublimation processed SbS devices. This work demonstrates an effective strategy to deposit high-quality low-defect-density SbS films via vacuum-based physical methods for optoelectronic applications.

摘要

硫化锑(SbS)因其在构建高效、经济高效且环境友好型太阳能电池方面的巨大前景而备受关注。可扩展的近距离升华(CSS)是一种成熟的物理沉积方法,用于制造光伏薄膜。然而,通过CSS工艺制备的吸收层薄膜通常晶粒尺寸较小,晶界密度高,导致严重的缺陷诱导电荷载流子非辐射复合,进而造成较大的开路电压(V)损失。在这项工作中,证明了化学浴沉积的SbS籽晶层可以作为晶核,并介导大晶粒、高度致密的CSS工艺制备的SbS薄膜的生长。这种籽晶介导的SbS薄膜具有降低的缺陷密度和增强的电荷载流子传输,这使得平面SbS太阳能电池的功率转换效率(PCE)提高到4.78%。此外,获得的0.755 V的V是迄今为止基于真空蒸发和升华工艺的SbS器件所报道的最高值。这项工作展示了一种通过基于真空的物理方法沉积高质量、低缺陷密度SbS薄膜用于光电子应用的有效策略。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2324/11633527/bf05984d2be5/ADVS-11-2409312-g002.jpg

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