Noorbakhsh Nezhad Amir Hossein, Rahimi Ehsan, Arefinia Reza, Davoodi Ali, Hosseinpour Saman
Materials and Metallurgical Engineering Department, Faculty of Engineering, Ferdowsi University of Mashhad (FUM), Mashhad 9177948974, Iran.
Department of Engineering and Architecture, University of Udine, Via Cotonificio 108, 33100 Udine, Italy.
Materials (Basel). 2020 Apr 28;13(9):2052. doi: 10.3390/ma13092052.
In the present study, the impact of copper substrate grain size on the structure of the succeeding electrodeposited nickel film and its consequent corrosion resistance in 3.5% NaCl medium were evaluated before and after functionalization with stearic acid. Nickel layers were electrodeposited on two different copper sheets with average grain size of 12 and 25 µm, followed by deposition of stearic acid film through self-assembly. X-ray diffraction analysis of the electrodeposited nickel films revealed that the deposition of nickel film on the Cu substrate with small (12 µm) and large (25 µm) grains is predominantly governed by growth in the (220) and (111) planes, respectively. Both electrodeposited films initially exhibited a hydrophilic nature, with water-contact angles of 56° and <10°, respectively. After functionalization with stearic acid, superhydrophobic films with contact angles of ~150° were obtained on both samples. In a 3.5% NaCl medium, the corrosion resistance of the nickel layer electrodeposited on the copper substrate with 25 µm grains was three times greater than that deposited on the copper substrate with 12 µm grains. After functionalization, the corrosion resistance of both films was greatly improved in both short and long immersion times in 3.5% NaCl medium.
在本研究中,评估了铜基底晶粒尺寸对后续电沉积镍膜结构及其在3.5%氯化钠介质中耐腐蚀性的影响,这一评估是在硬脂酸官能化前后进行的。在平均晶粒尺寸分别为12微米和25微米的两种不同铜片上电沉积镍层,随后通过自组装沉积硬脂酸膜。对电沉积镍膜的X射线衍射分析表明,在小晶粒(12微米)和大晶粒(25微米)的铜基底上沉积镍膜时,分别主要受(220)面和(111)面生长的控制。两种电沉积膜最初均表现出亲水性,水接触角分别为56°和<10°。在用硬脂酸官能化后,两个样品上均获得了接触角约为150°的超疏水膜。在3.5%氯化钠介质中,沉积在25微米晶粒铜基底上的镍层的耐腐蚀性比沉积在12微米晶粒铜基底上的镍层高三倍。官能化后,在3.5%氯化钠介质中短时间和长时间浸泡时,两种膜的耐腐蚀性均得到极大提高。