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孪生T型石墨烯:一种新型半导体二维碳同素异形体。

Twin T-graphene: a new semiconducting 2D carbon allotrope.

作者信息

Bhattacharya Debaprem, Jana Debnarayan

机构信息

Government College of Engineering & Textile Technology, Berhampore, WB, India.

出版信息

Phys Chem Chem Phys. 2020 May 14;22(18):10286-10294. doi: 10.1039/d0cp00263a. Epub 2020 May 1.

Abstract

Two dimensional carbon allotropes with multiple atomic layers have attracted significant interest recently. In this work a new three atomic layer thick 2D carbon allotrope, twin T-graphene, is proposed. The sp hybridized dynamically stable phase is a nonmagnetic semiconducting material with an indirect band gap of 1.79 eV. Thermal stability investigations indicate that the material undergoes no change in the bonding pattern at 2000 K. The study of its mechanical properties indicates that it is an elastically isotropic soft material with low values of elastic constants. The electron mobility of the semiconductor is found to be nearly 375 cm V s. The material when doped with single nitrogen in the tetragonal site undergoes a drastic change in its electronic properties and manifests itself in the form of a bipolar magnetic semiconductor which is a potential spintronic material. The study of the optical properties clearly indicates an optical gap of 1.89 eV. The material shows optical response in the visible range. Two sharp characteristic EELS peaks indicate the presence of this material. All these characteristics indicate that this material can have potential photocatalytic activity and be an attractive material for the applications in field effect transistors.

摘要

具有多个原子层的二维碳同素异形体最近引起了广泛关注。在这项工作中,提出了一种新的三原子层厚的二维碳同素异形体——孪晶T-石墨烯。sp杂化的动态稳定相是一种非磁性半导体材料,间接带隙为1.79 eV。热稳定性研究表明,该材料在2000 K时键合模式不变。对其力学性能的研究表明,它是一种弹性各向同性的软材料,弹性常数较低。发现该半导体的电子迁移率接近375 cm² V⁻¹ s⁻¹。当在四方位置掺杂单个氮时,该材料的电子性质会发生剧烈变化,并表现为双极磁性半导体的形式,这是一种潜在的自旋电子材料。对光学性质的研究清楚地表明其光学带隙为1.89 eV。该材料在可见光范围内表现出光学响应。两个尖锐的特征电子能量损失谱(EELS)峰表明了这种材料的存在。所有这些特性表明,这种材料可能具有潜在的光催化活性,并且是场效应晶体管应用中一种有吸引力的材料。

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