Quayle Paul C
Department of Electrical and Computer Engineering, Michigan State University, 428 South Shaw Lane, East Lansing, MI 48824-1226, USA.
Acta Crystallogr A Found Adv. 2020 May 1;76(Pt 3):410-420. doi: 10.1107/S2053273320003095. Epub 2020 Apr 28.
Characterizing the crystalline disorder properties of heterovalent ternary semiconductors continues to challenge solid-state theory. Here, a Landau theory is developed for the wurtzite-based ternary semiconductor ZnSnN. It is shown that the symmetry properties of two nearly co-stable phases, with space groups Pmc2 and Pbn2, imply that a reconstructive phase transition is the source of crystal structure disorder via a mixture of phase domains. The site exchange defect, which consists of two adjacent antisite defects, is identified as the nucleation mechanism of the transition. A Landau potential based on the space-group symmetries of the Pmc2 and Pbn2 phases is constructed from the online databases in the ISOTROPY software suite and this potential is consistent with a system that undergoes a paraelectric to antiferroelectric phase transition. It is hypothesized that the low-temperature Pbn2 phase is antiferroelectric within the c-axis basal plane. The dipole arrangements within the Pbn2 basal plane yield a nonpolar spontaneous polarization and the electrical susceptibility derived from the Landau potential exhibits a singularity at the Néel temperature characteristic of antiferroelectric behavior. These results inform the study of disorder in the broad class of heterovalent ternary semiconductors, including those based on the zincblende structure, and open the door to the application of the ternaries in new technology spaces.
表征异价三元半导体的晶体无序特性仍然是固态理论面临的挑战。在此,针对纤锌矿基三元半导体ZnSnN 开发了一种朗道理论。结果表明,具有空间群Pmc2 和Pbn2 的两个近共稳相的对称性质意味着,重构相变是通过相畴混合导致晶体结构无序的根源。由两个相邻反位缺陷组成的位点交换缺陷被确定为转变的成核机制。基于Pmc2 和Pbn2 相的空间群对称性,利用ISOTROPY 软件套件中的在线数据库构建了朗道势,该势与经历顺电到反铁电相变的系统一致。据推测,低温Pbn2 相在c 轴基面内是反铁电的。Pbn2 基面内偶极排列产生非极性自发极化,从朗道势导出的电导率在反铁电行为的奈尔温度处表现出奇异性。这些结果为包括基于闪锌矿结构的半导体在内的广泛类别的异价三元半导体中的无序研究提供了参考,并为三元半导体在新技术领域的应用打开了大门。