Zhu Jingtao, Zhang Jiayi, Jiang Hui, Zhu Jie, Zhu Shengming, Li Miao, Ji Bin, Zhao Jiaoling
MOE Key Laboratory of Advanced Micro-structured Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China.
Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Zhangheng Road 239, Pudong District, Shanghai 201204, China.
ACS Appl Mater Interfaces. 2020 Jun 3;12(22):25400-25408. doi: 10.1021/acsami.0c03563. Epub 2020 May 18.
Sc/Si multilayers are one of the promising material combinations commonly used in the spectral range of 35-50 nm. However, diffusion and silicidation at the interfaces of Sc/Si multilayers limit widespread applications of this material combination. To improve the properties of Sc/Si multilayers, the scheme of barrier layers is utilized. In this work, a series of Sc/Si multilayers with boron carbide and carbon barrier layers were designed and fabricated to compare the properties including interface quality and thermal stability. The effect on the multilayer structure and quality before and after annealing were investigated by using grazing-incidence X-ray reflection, X-ray diffraction, rocking-curve X-ray diffuse scattering, transmission electron microscopy, and selected area electron diffraction. The results indicate that severe interdiffusion and crystallization occur in the multilayer with a carbon barrier after annealing. However, a boron carbide barrier layer improves thermal stability up to 550 °C since the interfaces remain abrupt and clear after annealing. The multilayer quality is confirmed to be improved significantly.
钪/硅多层膜是常用于35 - 50纳米光谱范围内的有前景的材料组合之一。然而，钪/硅多层膜界面处的扩散和硅化限制了这种材料组合的广泛应用。为了改善钪/硅多层膜的性能，采用了阻挡层方案。在这项工作中，设计并制备了一系列带有碳化硼和碳阻挡层的钪/硅多层膜，以比较包括界面质量和热稳定性在内的性能。通过掠入射X射线反射、X射线衍射、摇摆曲线X射线漫散射、透射电子显微镜和选区电子衍射研究了退火前后对多层膜结构和质量的影响。结果表明，退火后带有碳阻挡层的多层膜中发生了严重的相互扩散和结晶。然而，碳化硼阻挡层将热稳定性提高到了550°C，因为退火后界面仍保持陡峭和清晰。多层膜质量被证实得到了显著改善。
