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锯齿形1T'-二硫属化物纳米带中的稳定边缘结构和电子态

Stable edge structures and electronic states in zigzag 1T'-dichalcogenide nanoribbons.

作者信息

Zhang Huimin, Li Zhongyao

机构信息

College of Science, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China.

出版信息

J Phys Condens Matter. 2020 Jun 15;32(36). doi: 10.1088/1361-648X/ab9051.

Abstract

Based on first-principles calculations, we studied the various possible edge structures in zigzag 1T'-MoSand 1T'-WTenanoribbons. By the binding energy analysis, there are stable chalcogen S- and Te-terminated edge structures for 1T'-MoSand 1T'-WTenanoribbons, respectively. Unlike 1T'-MoSnanoribbons, where little edge reconstruction can be found, 1T'-WTenanoribbons suffer larger edge reconstruction. Moreover, the new edges of 1T'-WTecan be magnetized due to the spontaneous strain effect in narrow nanoribbons. Interestingly, there are quantum-well-like states near Fermi level in both 1T'-MoSand 1T'-WTenanoribbons. Our calculations may promote the experimental research for the edge structures and the application of 1T'-dichalcogenide nanoribbons in nanodevices.

摘要

基于第一性原理计算,我们研究了锯齿形1T'-MoS和1T'-WTe纳米带中各种可能的边缘结构。通过结合能分析,1T'-MoS和1T'-WTe纳米带分别存在稳定的硫族元素S端和Te端边缘结构。与几乎没有边缘重构的1T'-MoS纳米带不同,1T'-WTe纳米带的边缘重构更为显著。此外,由于窄纳米带中的自发应变效应,1T'-WTe的新边缘会被磁化。有趣的是,1T'-MoS和1T'-WTe纳米带在费米能级附近都存在类量子阱态。我们的计算可能会推动关于边缘结构的实验研究以及1T'-二硫族化物纳米带在纳米器件中的应用。

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