Li Simei, Zhang Shuqing, Zhao Ruiqi
Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China.
Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, China.
Nanoscale. 2022 Jun 16;14(23):8454-8462. doi: 10.1039/d2nr00488g.
Monolayer 1T'-type rhenium disulphide (1T'-ReS) has promising applications in spintronic devices due to its unique electronic properties induced by inversion loss in the crystal structure. A prerequisite of such applications is introducing magnetism in 1T'-ReS. Here, we studied the electronic and magnetic properties of zigzag 1T'-ReS nanoribbons (1T'-ReS-NRs) and further tuned their magnetic properties by transition-metal doping. Our results show that 1T'-ReS-NRs exhibit tunable electronic properties ranging from indirect bandgap to direct bandgap to metallic properties. Among the energy-favoured S-terminated 1T'-ReS-NRs, only one exhibits robust magnetic properties. The magnetic properties of the other two nanoribbons can be effectively tuned by doping with certain transition metals. Among the configurations of TM-doped 1T'-ReS-NRs, only those with TM atoms introduced at the edge sites are energy-favoured. The magnetic properties of TM-doped 1T'-ReS-NRs are mainly contributed by the TM atom, the Re and S atoms at the edges of the nanoribbons. Besides this, the bulk Re and S atoms close to the TM atom also contribute positively to the magnetism and such contributions become weaker as the atoms are farther from the TM atom. These results provide deep insights into the modulations of the electronic and magnetic properties of 1T'-ReS at the atomic scale, and thus should pave an effective path for fabricating 2D materials for spintronic devices.
单层1T'-型二硫化铼(1T'-ReS)因其晶体结构中的反演对称性破缺所诱导的独特电子性质,在自旋电子器件中具有广阔的应用前景。此类应用的一个前提是在1T'-ReS中引入磁性。在此,我们研究了锯齿形1T'-ReS纳米带(1T'-ReS-NRs)的电子和磁性性质,并通过过渡金属掺杂进一步调节其磁性。我们的结果表明,1T'-ReS-NRs展现出从间接带隙到直接带隙再到金属性质的可调电子性质。在能量有利的S端终止的1T'-ReS-NRs中,只有一种表现出稳健的磁性。另外两种纳米带的磁性可以通过掺杂某些过渡金属来有效调节。在TM掺杂的1T'-ReS-NRs的构型中,只有那些在边缘位置引入TM原子的构型在能量上是有利的。TM掺杂的1T'-ReS-NRs的磁性主要由TM原子、纳米带边缘的Re和S原子贡献。除此之外,靠近TM原子的体相Re和S原子也对磁性有正向贡献,且随着这些原子离TM原子距离的增加,这种贡献变弱。这些结果为在原子尺度上调控1T'-ReS的电子和磁性性质提供了深刻见解,因此应为制造用于自旋电子器件的二维材料铺平有效途径。