Shekhar Himanshu, Fenigstein Amos, Leitner Tomer, Lavi Becky, Veinger Dmitry, Tessler Nir
Microelectronics and Nanoelectronics Centers, Electrical Engineering Department, Technion Israel Institute of Technology, Haifa, 32000, Israel.
TowerJazz, Tower Semiconductor Ltd., Migdal Haemek, 2310502, Israel.
Sci Rep. 2020 May 5;10(1):7594. doi: 10.1038/s41598-020-64565-5.
Organic photodiodes (OPDs) for its interesting optoelectronic properties has the potential to be utilized with complementary metal-oxide-semiconductor (CMOS) circuit for imaging, automotive, and security based applications. To achieve such a hybrid device as an image sensor, it is imperative that the quality of the OPD remains high on the CMOS substrate and that it has a well-connected optoelectronic interface with the underneath readout integrated circuit (ROIC) for efficient photogeneration and signal readout. Here, we demonstrate seamless integration of a thermally deposited visible light sensitive small molecule OPD on a standard commercial CMOS substrate using optimized doped PCBM buffer layer. Under a standard power supply voltage of 3 V, this hybrid device shows an excellent photolinearity in the entire bias regime, a high pixel sensitivity of 2 V/Lux.sec, a dynamic range (DR) of 71 dB, and a low dark leakage current density of 1 nA/cm. Moreover, the integrated OPD has a minimum bandwidth of 400 kHz. The photoresponse nonuniformity being only 1.7%, achieved under research lab conditions, strengthens the notion that this fully-CMOS compatible technology has the potential to be applied in high-performance large-scale imaging array.
有机光电二极管（OPD）因其有趣的光电特性，有潜力与互补金属氧化物半导体（CMOS）电路一起用于成像、汽车和安防等应用。要实现这样一种作为图像传感器的混合器件，OPD在CMOS衬底上的质量必须保持较高，并且它与下面的读出集成电路（ROIC）有良好连接的光电接口，以实现高效的光生载流子产生和信号读出。在此，我们展示了使用优化的掺杂PCBM缓冲层，将热沉积的可见光敏感小分子OPD无缝集成到标准商业CMOS衬底上。在3 V的标准电源电压下，这种混合器件在整个偏置范围内表现出优异的光线性，像素灵敏度高达2 V/Lux·sec，动态范围（DR）为71 dB，暗漏电流密度低至1 nA/cm²。此外，集成的OPD最小带宽为400 kHz。在研究实验室条件下实现的光响应不均匀性仅为1.7%，这强化了这种完全与CMOS兼容的技术有潜力应用于高性能大规模成像阵列的观点。
