Yu Xianbo, Zhao Guangyu, Gong Shan, Liu Chao, Wu Canlong, Lyu Pengbo, Maurin Guillaume, Zhang Naiqing
School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China.
Interdisciplinary Science Research Center, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China.
ACS Appl Mater Interfaces. 2020 Jun 3;12(22):24777-24785. doi: 10.1021/acsami.0c04838. Epub 2020 May 22.
The thermodynamically stable phase of molybdenum disulfide (MoS) is evaluated as a promising and durable nonprecious-metal electrocatalyst toward the hydrogen evolution reaction (HER); however, its actual catalytic activity is restricted by an inert basal plane, low electronic conductivity, low density, and using efficiency of edged atoms. Moreover, 2D/2D van der Waals (vdws) heterostructures (HSs) with face-to-face contact can construct a highly coupled interface and are demonstrated to have immense potential for catalytic applications. In the present work, a 2D/2D hetero-layered architecture of an electrocatalyst, based on the alternate arrangement of ultrasmall monolayer MoS nanosheets (approximately 5-10 nm) and ultrathin graphene (G) sheets, is prepared by a facilely chemical process, which is named as MoS/G HS. The unique structural characteristic of MoS/G HS is in favor of accommodating more active sites as the centers of ad/desorption hydrogen and transferring and separating the charges at a coupled interface to improve the electronic conductivity and durability. The density functional theory calculation results further confirm that the alternately arranged G layers and MoS monolayers, as well as the expanded interplanar distance of 1.104 nm for MoS/G HS, can exhibit a superior HER performance in both 0.5 M HSO and 1.0 M KOH.
二硫化钼(MoS)的热力学稳定相被评估为一种有前景且耐用的非贵金属析氢反应(HER)电催化剂;然而,其实际催化活性受到惰性基面、低电子导电性、低密度以及边缘原子利用效率的限制。此外,具有面对面接触的二维/二维范德华(vdW)异质结构(HSs)可以构建高度耦合的界面,并被证明在催化应用方面具有巨大潜力。在本工作中,通过一种简便的化学方法制备了一种基于超小单层MoS纳米片(约5 - 10 nm)和超薄石墨烯(G)片交替排列的二维/二维异质层结构电催化剂,命名为MoS/G HS。MoS/G HS独特的结构特征有利于容纳更多作为氢吸附/脱附中心的活性位点,并在耦合界面处转移和分离电荷,以提高电子导电性和耐久性。密度泛函理论计算结果进一步证实,交替排列的G层和MoS单层以及MoS/G HS 1.104 nm的扩大平面间距,在0.5 M HSO和1.0 M KOH中均能表现出优异的HER性能。