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基于混合超表面的用于传感应用的三波段完美光吸收器。

Triple-Band Perfect Light Absorber Based on Hybrid Metasurface for Sensing Application.

作者信息

Cheng Yongzhi, Chen Fu, Luo Hui

机构信息

School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, 430081, People's Republic of China.

出版信息

Nanoscale Res Lett. 2020 May 11;15(1):103. doi: 10.1186/s11671-020-03332-x.

Abstract

A simple design of triple-band perfect light absorber (PLA) based on hybrid metasurface in visible region has been presented in this work, which turns out to be applicable for refractive index (RI) sensing. Distinct from previous designs, the proposed hybrid metasurface for visible PLA is only consisted of periodic silicon cross nanostructure arrays and gold substrate. The periodic silicon cross arrays deposited on the gold substrate contribute to excite the guided modes under the normal incident light illumination. According to the simulation results, it can be found that three perfect absorption peaks of 98.1%, 98.7%, and 99.6% which are located at 402.5 THz, 429.5 THz, and 471.5 THz, respectively, have been clearly observed in PLA. This triple-band perfect absorption effect could be attributed to the intrinsic loss of silicon material originated from the guided mode excitations caused by the standing waves of different orders. It has been confirmed that the perfect absorption properties of the PLA can be easily regulated by changing the geometric parameters of the unit-cell nanostructure. Furthermore, the designed PLA served as a RI sensor can achieve sensitivity of about 25.3, 41.3, and 31.9 THz /refractive index unit (RIU). It can be believed that the proposed design of PLA for RI sensing would provide great potential applications in sensing, detecting, the enhanced visible spectroscopy, etc.

摘要

本文提出了一种基于混合超表面的可见光区域三波段完美光吸收器(PLA)的简单设计,结果表明该设计适用于折射率(RI)传感。与先前的设计不同,所提出的用于可见光PLA的混合超表面仅由周期性硅十字纳米结构阵列和金衬底组成。沉积在金衬底上的周期性硅十字阵列有助于在垂直入射光照射下激发导模。根据模拟结果,可以发现PLA中分别位于402.5太赫兹、429.5太赫兹和471.5太赫兹处的三个完美吸收峰,吸收率分别为98.1%、98.7%和99.6%,已清晰观察到。这种三波段完美吸收效应可归因于硅材料的固有损耗,该损耗源于不同阶驻波引起的导模激发。已经证实,通过改变单元胞纳米结构的几何参数,可以轻松调节PLA的完美吸收特性。此外,设计用作RI传感器的PLA可以实现约25.3、41.3和31.9太赫兹/折射率单位(RIU)的灵敏度。可以相信,所提出的用于RI传感的PLA设计将在传感、检测、增强型可见光谱学等方面提供巨大的潜在应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e61f/7214565/2259572fe446/11671_2020_3332_Fig1_HTML.jpg

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