Davis Jordan A, Kim Myun Sik, El Amili Abdelkrim, Trotter Douglas C, Starbuck Andrew L, Dallo Christina, Pomerene Andrew T, DeRose Christopher T, Lentine Anthony L, Fainman Yeshaiahu
Appl Opt. 2020 May 1;59(13):4158-4164. doi: 10.1364/AO.390522.
We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry-Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.
我们展示了一种基于与硅光子芯片耦合的III/V族反射半导体光放大器（RSOA）的强度可通过千兆赫兹调谐速度进行调谐的激光器。该硅芯片包含一个基于布拉格的法布里-珀罗谐振器，以在其阻带内形成一个无源带通滤波器，从而实现激光器的单模运行。我们观察到边模抑制比为43 dB，线宽为790 kHz，在1530 nm附近的光输出功率为1.65 mW。我们还研究了使用微球透镜作为RSOA与硅芯片之间的另一种耦合方法。
