Yu Jing, Phang Pheng, Samundsett Christian, Basnet Rabin, Neupan Guru P, Yang Xi, Macdonald Daniel H, Wan Yimao, Yan Di, Ye Jichun
Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo City 315201, P. R. China.
Research School of Electrical, Energy and Materials Engineering, The Australian National University, Canberra, ACT 2601, Australia.
ACS Appl Mater Interfaces. 2020 Jun 10;12(23):26177-26183. doi: 10.1021/acsami.0c04439. Epub 2020 May 29.
Efficient and stable electron selective materials compatible with commercial production are essential to the fabrication of dopant-free silicon solar cells. In this work, we report an air-stable TiN (titanium nitride) polycrystalline film, deposited using radio frequency sputtering process, as an electron selective contact in silicon solar cells. TiN films deposited at 300 W and 1.5 mTorr exhibit a low contact resistivity of 2.0 mΩ·cm. Furthermore, the main factors and mechanisms affecting the carrier selectivity properties are also explored. TiN layers as full area rear electron contacts in -type silicon solar cells have been successfully implemented, even though TiN film contains some oxygen. This process yields a 17% increment in relative efficiency in comparison with reference devices (-Si/Al contact). Hence, considering the low thermal budget, scalable technique, and low contact resistivity, the TiN layers can pave the way to fabricate high-efficiency selective contact silicon solar cells with a higher degree of reproducibility.
与商业生产兼容的高效稳定的电子选择性材料对于无掺杂剂硅太阳能电池的制造至关重要。在这项工作中，我们报道了一种使用射频溅射工艺沉积的空气稳定的TiN（氮化钛）多晶薄膜，作为硅太阳能电池中的电子选择性接触。在300 W和1.5 mTorr条件下沉积的TiN薄膜表现出2.0 mΩ·cm的低接触电阻率。此外，还探讨了影响载流子选择性特性的主要因素和机制。尽管TiN薄膜含有一些氧，但已成功实现将TiN层用作n型硅太阳能电池的全区域背面电子接触。与参考器件（n-Si/Al接触）相比，该工艺使相对效率提高了17%。因此，考虑到低热预算、可扩展技术和低接触电阻率，TiN层可为制造具有更高再现性的高效选择性接触硅太阳能电池铺平道路。
