Yu Qianhuan, Gao Junyi, Ye Nan, Chen Baiheng, Sun Keye, Xie Linli, Srinivasan Kartik, Zervas Michael, Navickaite Gabriele, Geiselmann Michael, Beling Andreas
Opt Express. 2020 May 11;28(10):14824-14830. doi: 10.1364/OE.387939.
Heterogeneous integration through low-temperature die bonding is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (SiN) photonic platform. Here we demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on SiN waveguides with 20 nA dark current, 20 GHz bandwidth, and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Open eye diagrams at 40 Gbit/s are demonstrated. Balanced photodiodes of this type reach 10 GHz bandwidth with over 40 dB common mode rejection ratio.
通过低温芯片键合实现的异质集成是一种很有前景的技术，可在氮化硅（SiN）光子平台上实现高性能的III-V族光电探测器。在此，我们展示了在SiN波导上的InGaAs/InP改进型单载流子光电二极管，其暗电流为20 nA，带宽为20 GHz，在1550 nm和1064 nm处的外部（内部）响应率分别达到创纪录的0.8 A/W（0.94 A/W）和0.33 A/W（0.83 A/W）。展示了40 Gbit/s时的开放眼图。这种类型的平衡光电二极管带宽达到10 GHz，共模抑制比超过40 dB。
