Sun Keye, Gao Junyi, Jung Daehwan, Bowers John, Beling Andreas
Opt Lett. 2020 Jun 1;45(11):2954-2956. doi: 10.1364/OL.392567.
Low-dark-current waveguide modified uni-traveling carrier photodiodes (PDs) are demonstrated by direct heteroepitaxy of InGaAs/InAlGaAs on silicon templates. The PDs have a dark current of 0.1 µA at -3 bias and an internal (external) responsivity of 0.78 A/W (0.27 A/W). The 3 dB bandwidth is 28 GHz, and open eye diagrams are detected at 40 Gbit/s.
通过在硅模板上直接进行InGaAs/InAlGaAs异质外延，展示了低暗电流波导改进型单载流子光电二极管（PD）。这些光电二极管在-3偏压下的暗电流为0.1 μA，内部（外部）响应度为0.78 A/W（0.27 A/W）。3 dB带宽为28 GHz，并且在40 Gbit/s时检测到了张开的眼图。
