Dirdal Christopher A, Jensen Geir Uri, Angelskår Hallvard, Vaagen Thrane Paul Conrad, Gjessing Jo, Ordnung Daniel Alfred
Opt Express. 2020 May 11;28(10):15542-15561. doi: 10.1364/OE.393328.
We demonstrate the fabrication of diffraction-limited dielectric metasurface lenses for NIR by the use of standard industrial high-throughput silicon processing techniques: UV nano imprint lithography (UV-NIL) combined with continuous reactive ion etching (RIE) and pulsed Bosch deep reactive ion etching (DRIE). As the research field of metasurfaces moves towards applications, these techniques are relevant as potential replacements of commonly used cost-intensive fabrication methods utilizing electron beam ithography. We show that washboard-type sidewall surface roughness arising from the Bosch DRIE process can be compensated for in the design of the metasurface, without deteriorating lens quality. Particular attention is given to fabrication challenges that must be overcome towards high-throughput production of relevance to commercial applications. Lens efficiencies are measured to be 25.5% and 29.2% at wavelengths λ = 1.55μm and λ = 1.31μm, respectively. A number of routes towards process optimization are proposed in relation to encountered challenges.
紫外纳米压印光刻(UV-NIL)与连续反应离子蚀刻(RIE)以及脉冲博世深反应离子蚀刻(DRIE)相结合。随着超表面研究领域朝着应用方向发展,这些技术作为利用电子束光刻的常用成本高昂的制造方法的潜在替代方法具有相关性。我们表明,博世DRIE工艺产生的搓板型侧壁表面粗糙度可以在超表面设计中得到补偿,而不会降低透镜质量。特别关注了为实现与商业应用相关的高通量生产必须克服的制造挑战。在波长λ = 1.55μm和λ = 1.31μm时,测量得到的透镜效率分别为25.5%和29.2%。针对所遇到的挑战,提出了一些工艺优化途径。