Zhuang Zhe, Iida Daisuke, Kirilenko Pavel, Velazquez-Rizo Martin, Ohkawa Kazuhiro
Opt Express. 2020 Apr 13;28(8):12311-12321. doi: 10.1364/OE.389725.
Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low pressures, and a subsequent two-step annealing resulted in a low sheet resistivity (below 2×10 Ωcm) and high transmittance (over 98%) in the amber and red regions between 590 nm to 780 nm. Double ITO layers by sputtering could form an excellent ohmic contact with p-GaN. Application of the double ITO layers on amber and red LEDs enhanced light output power by 15.6% and 13.0%, respectively, compared to those using ITO by e-beam evaporation.
针对基于氮化铟镓（InGaN）的琥珀色/红色发光二极管（LED），对氧化铟锡（ITO）的制备工艺进行了优化。射频溅射在低压下降低了ITO的薄层电阻，随后的两步退火使得在590 nm至780 nm的琥珀色和红色区域具有低薄层电阻（低于2×10Ωcm）和高透过率（超过98%）。通过溅射形成的双层ITO可以与p型氮化镓（p-GaN）形成良好的欧姆接触。与采用电子束蒸发ITO的琥珀色和红色LED相比，在其上应用双层ITO分别使光输出功率提高了15.6%和13.0%。
