Kim Min-Ju
School of Electronics and Electrical Engineering, Department of Foundry Engineering, Convergence Semiconductor Research Center, Dankook University, Yongin-si 16890, Republic of Korea.
Materials (Basel). 2023 Jun 29;16(13):4718. doi: 10.3390/ma16134718.
This research study thoroughly examines the optimal thickness of indium tin oxide (ITO), a transparent electrode, for near-ultraviolet (NUV) light-emitting diodes (LEDs) based on InGaN/AlGaInN materials. A range of ITO thicknesses from 30 to 170 nm is investigated, and annealing processes are performed to determine the most favorable figure of merit (FOM) by balancing transmittance and sheet resistance in the NUV region. Among the films of different thicknesses, an ITO film measuring 110 nm, annealed at 550 °C for 1 min, demonstrates the highest FOM. This film exhibits notable characteristics, including 89.0% transmittance at 385 nm, a sheet resistance of 131 Ω/□, and a contact resistance of 3.1 × 10 Ω·cm. Comparing the performance of NUV LEDs using ITO films of various thicknesses (30, 50, 70, 90, 130, 150, and 170 nm), it is observed that the NUV LED employing ITO with a thickness of 110 nm achieves a maximum 48% increase in light output power at 50 mA while maintaining the same forward voltage at 20 mA.
本研究全面考察了基于InGaN/AlGaInN材料的近紫外（NUV）发光二极管（LED）的透明电极氧化铟锡（ITO）的最佳厚度。研究了一系列30至170纳米的ITO厚度，并进行退火处理，以通过平衡NUV区域的透过率和薄层电阻来确定最有利的品质因数（FOM）。在不同厚度的薄膜中，在550°C退火1分钟的110纳米ITO薄膜表现出最高的FOM。该薄膜具有显著特性，包括在385纳米处的透过率为89.0%、薄层电阻为131Ω/□以及接触电阻为3.1×10Ω·cm。比较使用不同厚度（30、50、70、90、130、150和170纳米）ITO薄膜的NUV LED的性能，观察到使用110纳米厚ITO的NUV LED在50毫安时的光输出功率最大增加48%，同时在20毫安时保持相同的正向电压。
