Li Zejun, Zhang Xiuying, Zhao Xiaoxu, Li Jing, Herng Tun Seng, Xu Haomin, Lin Fanrong, Lyu Pin, Peng Xinnan, Yu Wei, Hai Xiao, Chen Cheng, Yang Huimin, Martin Jens, Lu Jing, Luo Xin, Castro Neto A H, Pennycook Stephen J, Ding Jun, Feng Yuanping, Lu Jiong
Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.
Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore.
Adv Mater. 2020 Jun;32(25):e1907645. doi: 10.1002/adma.201907645. Epub 2020 May 17.
Ferromagnetism and superconductivity are two antagonistic phenomena since ferromagnetic exchange fields tend to destroy singlet Cooper pairs. Reconciliation of these two competing phases has been achieved in vertically stacked heterostructures where these two orders are confined in different layers. However, controllable integration of these two phases in one atomic layer is a longstanding challenge. Here, an interlayer-space-confined chemical design (ICCD) is reported for the synthesis of dilute single-atom-doped TaS molecular superlattice, whereby ferromagnetism is observed in the superconducting TaS layers. The intercalation of 2H-TaS crystal with bulky organic ammonium molecule expands its van der Waals gap for single-atom doping via co-intercalated cobalt ions, resulting in the formation of quasi-monolayer Co-doped TaS superlattices. Isolated Co atoms are decorated in the basal plane of the TaS via substituting the Ta atom or anchoring at a hollow site, wherein the orbital-selected p-d hybridization between Co and neighboring Ta and S atoms induces local magnetic moments with strong ferromagnetic coupling. This ICCD approach can be applied to various metal ions, enabling the synthesis of a series of crystal-size TaS molecular superlattices.
铁磁性和超导性是两种相互对抗的现象,因为铁磁交换场倾向于破坏单重库珀对。在垂直堆叠的异质结构中已经实现了这两个竞争相的协调,其中这两种有序状态被限制在不同的层中。然而,在一个原子层中可控地整合这两个相是一个长期存在的挑战。在此,报道了一种层间空间受限化学设计(ICCD),用于合成稀单原子掺杂的TaS分子超晶格,由此在超导TaS层中观察到铁磁性。用体积较大的有机铵分子插入2H-TaS晶体,通过共插入钴离子来扩大其范德华间隙以进行单原子掺杂,从而形成准单层钴掺杂的TaS超晶格。孤立的钴原子通过取代Ta原子或锚定在空位处而修饰在TaS的基面中,其中Co与相邻Ta和S原子之间的轨道选择性p-d杂化诱导具有强铁磁耦合的局部磁矩。这种ICCD方法可应用于各种金属离子,从而能够合成一系列晶体尺寸的TaS分子超晶格。