Wang Fakun, Zhang Zhuang, Zhang Yue, Nie Anmin, Zhao Wei, Wang Dong, Huang Fuqiang, Zhai Tianyou
State Key Laboratory of Material Processing and Die and Mould Technology, School of Material Sciences and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
Adv Mater. 2020 Jun;32(25):e2001979. doi: 10.1002/adma.202001979. Epub 2020 May 17.
The emerging 2D layered transition metal trihalides (MX ) have attracted extremely high interest given their exceptional structural and physical properties. Continuing to extend the library of 2D MX is essential for exploring new physical phenomena and enabling new functionality. Herein, the optical and electrical properties and the photodetection behavior of atomically thin RhI flakes exfoliated from bulk crystals are reported. This compound exhibits superior air and thermal stability, as well as thickness-dependent bandgap from 1.1 (18L) to 1.4 eV (2L). Field-effect transistors based on the few-layer RhI flakes display n-type semiconducting behavior with competitive mobility of 2.5 cm V s and ON/OFF current ratio of 4 × 10 . Importantly, the outstanding responsivity of 11.5 A W and high specific detectivity of 2 × 10 Jones are recorded from the RhI photodetectors under 980 nm illumination at room temperature in air. These findings indicate a variety of potential applications of atomically thin RhI flakes in future 2D-material-based electronic and optoelectronic devices.
新兴的二维层状过渡金属三卤化物（MX ）因其优异的结构和物理性质而备受关注。持续扩展二维MX的材料库对于探索新的物理现象和实现新功能至关重要。在此，报道了从块状晶体中剥离出的原子级薄的RhI薄片的光学和电学性质以及光电探测行为。该化合物表现出优异的空气和热稳定性，以及厚度依赖的带隙，范围从1.1（18层）到1.4 eV（2层）。基于几层RhI薄片的场效应晶体管表现出n型半导体行为，具有2.5 cm² V⁻¹ s⁻¹的竞争迁移率和4×10³的开/关电流比。重要的是，在室温空气中980 nm光照下，RhI光电探测器记录到了11.5 A W⁻¹的出色响应度和2×10¹² Jones的高比探测率。这些发现表明原子级薄的RhI薄片在未来基于二维材料的电子和光电器件中有多种潜在应用。
