Luo Jiaqi, Song Xiaohui, Lu Yingying, Hu Yanjie, Lv Xiaojing, Li Lin, Li Xueping, Deng Jianping, Yan Yong, Jiang Yurong, Xia Congxin
Henan Key Laboratory of Photovoltaic Materials, Department of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China.
Department of Electronic and Electrical Engineering, Henan Normal University, Xinxiang 453007, People's Republic of China.
J Phys Condens Matter. 2022 May 11;34(28). doi: 10.1088/1361-648X/ac6926.
Two-dimensional (2D) layered tin sulfide compounds including SnSand SnS have attracted increasing attention due to their great potential application in the fields of optoelectronics and energy storage. However, device development has been delayed by the lack of capabilities to synthesize large-scale and high-quality 2D tin sulfide. Here, a phase-controlled synthesis of SnSand SnS flakes with lateral size over 100 m was successfully realized via a facile chemical vapor deposition method. The lateral size of flakes and phase transformation of SnSto SnS can be tuned via changing the synthesis temperature. Compared to the formation of the SnSphase at relative low temperature (<750 °C), the SnS phase is favorable at higher temperature. The phototransistor based on the as-prepared SnSand SnS exhibits excellent photoresponse to 405 nm laser, including a high responsivity (1.7 × 10mA W), fast response rates (rise/decay time of 13/51 ms), an outstanding external quantum efficiency (5.3 × 10%), and a remarkable detectivity (6.24 × 10Jones) for SnS-based phototransistor, and these values are superior to the most reported SnSbased photodetectors. Although the responsivity (3390 mA W) and detectivity (1.1 × 10Jones) of SnS-based device is lower than that of the SnSphototransistor, it has a faster rise/decay time of 3.10/1.59 ms. This work provides a means of tuning the size and phase of 2D layered tin sulfide, and promotes the application of SnSin high-performance optoelectronic devices.
包括SnS和SnS₂在内的二维（2D）层状硫化锡化合物，因其在光电子学和能量存储领域的巨大潜在应用而受到越来越多的关注。然而，由于缺乏合成大规模高质量二维硫化锡的能力，器件开发一直滞后。在此，通过一种简便的化学气相沉积方法，成功实现了横向尺寸超过100μm的SnS和SnS₂薄片的相控合成。薄片的横向尺寸以及SnS向SnS₂的相变可以通过改变合成温度来调控。与在相对低温（<750°C）下形成SnS相相比，在较高温度下更有利于形成SnS₂相。基于所制备的SnS和SnS₂的光电晶体管对405nm激光表现出优异的光响应，包括高响应度（1.7×10³mA W⁻¹）、快速响应速率（上升/衰减时间为13/51ms）、出色的外量子效率（5.3×10⁴%）以及基于SnS的光电晶体管的显著探测率（6.24×10¹²Jones），这些值优于大多数已报道的基于SnS的光电探测器。尽管基于SnS的器件的响应度（3390mA W⁻¹）和探测率（1.1×10¹¹Jones）低于基于SnS₂的光电晶体管，但其上升/衰减时间更快，为3.10/1.59ms。这项工作提供了一种调控二维层状硫化锡尺寸和相的方法，并促进了SnS在高性能光电器件中的应用。
