Wu Hao, Iino Hiroaki, Hanna Jun-Ichi
Imaging Science and Engineering Research Center, Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, J1-2, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan.
ACS Appl Mater Interfaces. 2020 Jul 1;12(26):29497-29504. doi: 10.1021/acsami.0c05105. Epub 2020 Jun 22.
The fabrication of organic semiconductor thin films by printing technologies is expected to enable the low-cost production of devices such as flexible display drivers, RF-ID tags, and various chemical/biological sensors. However, large-scale high-speed fabrication of uniform semiconductor thin films with adequate electrical properties for these devices remains a big challenge. Herein, we demonstrate an ultrafast and scalable fabrication of uniform polycrystalline thin films with 100% surface coverage using liquid crystalline semiconductors such as 2-phenyl-7-decyl[1]benzothieno[3,2-][1]benzothiophene (Ph-BTBT-10) and 2.7-dioctyl[1]benzothieno[3,2-][1]benzothiophene (C8-BTBT-C8), at a rate of 3 orders of magnitude higher than before, i.e., 40 mm/s (2.4 m/min) or more by dip-coating in the drainage regime. Organic transistors fabricated with polycrystalline thin films of Ph-BTBT-10 show average mobilities of 4.13 ± 0.75 cm/(V s) in the bottom-gate-bottom-contact configuration and 10.90 ± 2.40 cm/(V s) in the bottom-gate-top-contact configuration comparable to those of the devices prepared with single-crystalline thin films. More importantly, these films almost maintain the FET performance when the substrate size is extended up to 4 square inch. The present findings are available for other liquid crystalline semiconductors and bring us one step closer to the realization of printed electronics.
通过印刷技术制造有机半导体薄膜有望实现诸如柔性显示驱动器、射频识别标签和各种化学/生物传感器等器件的低成本生产。然而,大规模高速制造具有适合这些器件电学性能的均匀半导体薄膜仍然是一个巨大挑战。在此,我们展示了使用诸如2-苯基-7-癸基[1]苯并噻吩并[3,2-][1]苯并噻吩(Ph-BTBT-10)和2,7-二辛基[1]苯并噻吩并[3,2-][1]苯并噻吩(C8-BTBT-C8)等液晶半导体,以比以前高3个数量级的速率,即40毫米/秒(2.4米/分钟)或更高的速率,在排水模式下通过浸涂实现100%表面覆盖率的超快且可扩展的均匀多晶薄膜制造。用Ph-BTBT-10多晶薄膜制造的有机晶体管在底栅底接触配置下的平均迁移率为4.13±0.75厘米²/(伏·秒),在底栅顶接触配置下为10.90±2.40厘米²/(伏·秒),与用单晶薄膜制备的器件相当。更重要的是,当基板尺寸扩展到4平方英寸时,这些薄膜几乎保持场效应晶体管性能。本研究结果适用于其他液晶半导体,并使我们向实现印刷电子学又迈进了一步。