Shin Min-Gyu, Bae Kang-Hwan, Jeong Hwan-Seok, Kim Dae-Hwan, Cha Hyun-Seok, Kwon Hyuck-In
School of Electrical and Electronics Engineering, Chung‑Ang University, Seoul 06974, Korea.
Micromachines (Basel). 2020 Sep 30;11(10):917. doi: 10.3390/mi11100917.
In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (), a lower subthreshold swing (), a positively shifted threshold voltage (), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower , higher , negatively shifted , and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs.
在本研究中，研究了用不同金属作为覆盖层对p沟道SnO薄膜晶体管（TFT）的电学性能和稳定性的影响。与原始TFT相比，Ni或Pt覆盖的SnO TFT表现出更高的场效应迁移率（）、更低的亚阈值摆幅（）、正向偏移的阈值电压（）以及改善的负栅极偏压应力（NGBS）稳定性。相反，与原始TFT相比，Al覆盖的SnO TFT表现出更低的、更高的、负向偏移的以及退化的NGBS稳定性。在Cr覆盖的SnO TFT和原始SnO TFT的电学性能之间未观察到显著差异。所获得的结果主要基于SnO和各种金属之间功函数差异导致的SnO TFT背沟道电位变化来解释。本研究表明，用不同金属作为覆盖层可实际用于调制p沟道SnO TFT的电学特性。
