School of Automation and Artificial Intelligence, Huazhong University of Science and Technology, Wuhan, 430074, China.
School of Computer Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Neural Netw. 2020 Aug;128:142-149. doi: 10.1016/j.neunet.2020.04.025. Epub 2020 May 7.
Neural networks implemented with traditional hardware face inherent limitation of memory latency. Specifically, the processing units like GPUs, FPGAs, and customized ASICs, must wait for inputs to read from memory and outputs to write back. This motivates memristor-based neuromorphic computing in which the memory units (i.e., memristors) have computing capabilities. However, training a memristor-based neural network is difficult since memristors work differently from CMOS hardware. This paper proposes a new training approach that enables prevailing neural network training techniques to be applied for memristor-based neuromorphic networks. Particularly, we introduce momentum and adaptive learning rate to the circuit training, both of which are proven methods that significantly accelerate the convergence of neural network parameters. Furthermore, we show that this circuit can be used for neural networks with arbitrary numbers of layers, neurons, and parameters. Simulation results on four classification tasks demonstrate that the proposed circuit achieves both high accuracy and fast speed. Compared with the SGD-based training circuit, on the WBC data set, the training speed of our circuit is increased by 37.2% while the accuracy is only reduced by 0.77%. On the MNIST data set, the new circuit even leads to improved accuracy.
基于传统硬件实现的神经网络面临固有内存延迟的限制。具体来说,处理单元(如 GPU、FPGA 和定制 ASIC)必须等待输入从内存中读取,以及输出写入回内存。这就促使基于忆阻器的神经形态计算发展,其中存储单元(即忆阻器)具有计算能力。然而,训练基于忆阻器的神经网络是困难的,因为忆阻器的工作方式与 CMOS 硬件不同。本文提出了一种新的训练方法,使现有的神经网络训练技术能够应用于基于忆阻器的神经形态网络。特别是,我们在电路训练中引入了动量和自适应学习率,这两种方法都被证明可以显著加速神经网络参数的收敛。此外,我们表明,该电路可用于具有任意数量的层、神经元和参数的神经网络。在四个分类任务上的仿真结果表明,所提出的电路在实现高精度的同时还具有快速的速度。与基于 SGD 的训练电路相比,在 WBC 数据集上,我们的电路的训练速度提高了 37.2%,而准确性仅降低了 0.77%。在 MNIST 数据集上,新电路甚至提高了准确性。