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支持超腔模的单个亚波长粒子中的激光作用。

Lasing Action in Single Subwavelength Particles Supporting Supercavity Modes.

作者信息

Mylnikov Vasilii, Ha Son Tung, Pan Zhenying, Valuckas Vytautas, Paniagua-Domínguez Ramón, Demir Hilmi Volkan, Kuznetsov Arseniy I

机构信息

Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634.

LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798.

出版信息

ACS Nano. 2020 Jun 23;14(6):7338-7346. doi: 10.1021/acsnano.0c02730. Epub 2020 Jun 2.

DOI:10.1021/acsnano.0c02730
PMID:32459463
Abstract

On-chip light sources are critical for the realization of fully integrated photonic circuitry. So far, semiconductor miniaturized lasers have been mainly limited to sizes on the order of a few microns. Further reduction of sizes is challenging fundamentally due to the associated radiative losses. While using plasmonic metals helps to reduce radiative losses and sizes, they also introduce Ohmic losses hindering real improvements. In this work, we show that, making use of quasibound states in the continuum, or supercavity modes, we circumvent these fundamental issues and realize one of the smallest purely semiconductor nanolasers thus far. Here, the nanolaser structure is based on a single semiconductor nanocylinder that intentionally takes advantage of the destructive interference between two supported optical modes, namely Fabry-Perot and Mie modes, to obtain a significant enhancement in the quality factor of the cavity. We experimentally demonstrate the concept and obtain optically pumped lasing action using GaAs at cryogenic temperatures. The optimal nanocylinder size is as small as 500 nm in diameter and only 330 nm in height with a lasing wavelength around 825 nm, corresponding to a size-to-wavelength ratio as low as 0.6.

摘要

片上光源对于实现完全集成的光子电路至关重要。到目前为止,半导体微型激光器的尺寸主要限制在几微米量级。由于相关的辐射损耗,进一步减小尺寸在根本上具有挑战性。虽然使用等离激元金属有助于减少辐射损耗和尺寸,但它们也会引入欧姆损耗,阻碍实际的改进。在这项工作中,我们表明,利用连续统中的准束缚态或超腔模式,我们规避了这些基本问题,实现了迄今为止最小的纯半导体纳米激光器之一。在这里,纳米激光器结构基于单个半导体纳米圆柱体,该圆柱体有意利用两种支持的光学模式(即法布里 - 珀罗模式和米氏模式)之间的相消干涉,以显著提高腔的品质因数。我们通过实验证明了这一概念,并在低温下使用砷化镓获得了光泵浦激光作用。最佳纳米圆柱体尺寸直径小至500纳米,高度仅为330纳米,激光波长约为825纳米,对应的尺寸与波长之比低至0.6。

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