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室温下氮化硅-WS异质结构中激子与连续谱中对称性保护的准束缚态之间的正入射激发强耦合

Normal-Incidence-Excited Strong Coupling between Excitons and Symmetry-Protected Quasi-Bound States in the Continuum in Silicon Nitride-WS Heterostructures at Room Temperature.

作者信息

Cao Shun, Dong Hongguang, He Jinlong, Forsberg Erik, Jin Yi, He Sailing

机构信息

Centre for Optical and Electromagnetic Research, National Engineering Research Center for Optical Instruments, Zhejiang University, Hangzhou 310058, China.

Ningbo Research Institute, Zhejiang University, Ningbo 315100, China.

出版信息

J Phys Chem Lett. 2020 Jun 18;11(12):4631-4638. doi: 10.1021/acs.jpclett.0c01080. Epub 2020 Jun 1.

DOI:10.1021/acs.jpclett.0c01080
PMID:32463697
Abstract

Room-temperature strong coupling between quasi-bound states in the continuum (q-BIC) of a silicon nitride metasurface and excitons in a WS monolayer is investigated in detail by both numerical simulations and theoretical calculations. The strong coupling between the q-BIC mode and excitons leads to a remarkable spectral splitting and typical anticrossing behavior of the Rabi splitting, which can be realized in the absorption spectra by varying the grating thickness and asymmetry parameter of the silicon-nitride metasurface, respectively. In addition, both the line width of the q-BIC mode and local electric field enhancement are found to affect the strong coupling, which needs to be considered in detail in q-BIC metasurface designs. This work provides a possible way to enhance light-matter interactions in transition metal dichalcogenides monolayers and pave the way for future quantum and nanophotonic applications.

摘要

通过数值模拟和理论计算,详细研究了氮化硅超表面连续谱中的准束缚态(q-BIC)与WS单层中的激子之间的室温强耦合。q-BIC模式与激子之间的强耦合导致了显著的光谱分裂和拉比分裂的典型反交叉行为,分别通过改变氮化硅超表面的光栅厚度和不对称参数,可以在吸收光谱中实现。此外,发现q-BIC模式的线宽和局部电场增强都会影响强耦合,这在q-BIC超表面设计中需要详细考虑。这项工作为增强过渡金属二卤化物单层中的光与物质相互作用提供了一种可能的方法,并为未来的量子和纳米光子应用铺平了道路。

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