Che Jiamang, Shao Hua, Kou Jianquan, Tian Kangkai, Chu Chunshuang, Hou Xu, Zhang Yonghui, Sun Qian, Zhang Zi-Hui
State Key Laboratory of Reliability and Intelligence of Electrical Equipment, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
Nanoscale Res Lett. 2019 Aug 6;14(1):268. doi: 10.1186/s11671-019-3078-8.
In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a thin p-AlGaN layer into the n-AlGaN electron supplier layer, a conduction band barrier can be generated in the n-type electron supplier layer, which enables the modulation of the lateral current distribution in the p-type hole supplier layer for DUV LEDs. Additionally, according to our studies, the Mg doping concentration, the thickness, the AlN composition for the p-AlGaN insertion layer and the NPN-AlGaN junction number are found to have a great influence on the current spreading effect. A properly designed NPN-AlGaN current spreading layer can improve the optical output power, external quantum efficiency (EQE), and the wall-plug efficiency (WPE) for DUV LEDs.
在本报告中，我们通过提出用于基于AlGaN的深紫外发光二极管（DUV LED）的n-AlGaN/p-AlGaN/n-AlGaN（NPN-AlGaN）结构的电流扩展层，在n-AlGaN层中局部调制掺杂类型。在n-AlGaN电子供应层中插入一层薄的p-AlGaN层后，可以在n型电子供应层中产生导带势垒，这使得能够调制DUV LED的p型空穴供应层中的横向电流分布。此外，根据我们的研究，发现Mg掺杂浓度、p-AlGaN插入层的厚度、AlN成分以及NPN-AlGaN结数对电流扩展效果有很大影响。适当设计的NPN-AlGaN电流扩展层可以提高DUV LED的光输出功率、外量子效率（EQE）和壁插效率（WPE）。
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