使用四（二甲基氨基）钛（TDMAT）和四氯化钛（TiCl）前驱体通过等离子体增强原子层沉积制备的氮化钛薄膜数据集。

Dataset for TiN Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium (TDMAT) and Titanium Tetrachloride (TiCl) Precursor.

作者信息

Lee Woo-Jae, Yun Eun-Young, Lee Han-Bo-Ram, Hong Suck Won, Kwon Se-Hun

机构信息

School of Materials Science and Engineering, Pusan National University, 30 Jangjeon-Dong Geumjeong-Gu, Busan, 609-735, Republic of Korea.

Department of Materials Science and Engineering, Incheon National University, 119 Academy-ro, Yeonsu-gu, Incheon, 22012, Republic of Korea.

出版信息

Data Brief. 2020 May 28;31:105777. doi: 10.1016/j.dib.2020.105777. eCollection 2020 Aug.

DOI:10.1016/j.dib.2020.105777

PMID:32551348

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7287241/

Abstract

A dataset in this report is regarding an article "Ultrathin Effective TiN Protective Films Prepared by Plasma-Enhanced Atomic Layer Deposition for High Performance Metallic Bipolar Plates of Polymer Electrolyte Membrane Fuel Cells" [1]. TiN (Titanium Nitride) thin films were deposited by Plasma-Enhanced Atomic Layer Deposition (PEALD) method using well known two types of precursor: using tetrakis(dimethylamino)titanium (TDMAT) and titanium tetrachloride (TiCl), and plasma. Summarized reports, growth characteristics (growth rate as a function of each precursor pulse time, plasma power, precursor and plasma purge time, thickness depending on the number of PEALD cycles), each precursor structural information and the atomic force micrographs (AFM) data are herein demonstrated. For TDMAT-TiN, N plasma was used as a reactant whereas, H+N plasma was used as TiCl-TiN reactant. To apply the bipolar plate substrate, two types of TiN thin films were introduced into Stainless steel (SUS) 316L.

摘要

本报告中的一个数据集涉及一篇文章《通过等离子体增强原子层沉积法制备用于聚合物电解质膜燃料电池高性能金属双极板的超薄高效氮化钛保护膜》[1]。氮化钛（TiN）薄膜通过等离子体增强原子层沉积（PEALD）方法，使用两种众所周知的前驱体沉积而成：四（二甲基氨基）钛（TDMAT）和四氯化钛（TiCl），并借助等离子体。本文展示了总结报告、生长特性（生长速率与各前驱体脉冲时间、等离子体功率、前驱体和等离子体吹扫时间的函数关系，厚度与PEALD循环次数的关系）、每种前驱体的结构信息以及原子力显微镜（AFM）数据。对于TDMAT-TiN，使用N等离子体作为反应物，而对于TiCl-TiN，使用H+N等离子体作为反应物。为了应用于双极板基板，将两种类型的TiN薄膜引入不锈钢（SUS）316L中。