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用于柔性透明光电器件的银纳米线电极的高分辨率过滤图案化

High-Resolution Filtration Patterning of Silver Nanowire Electrodes for Flexible and Transparent Optoelectronic Devices.

作者信息

Um Doo-Seung, Lee Youngsu, Kim Taehyo, Lim Seongdong, Lee Hochan, Ha Minjeong, Khan Ziyauddin, Kang Saewon, Kim Minsoo P, Kim Jin Young, Ko Hyunhyub

机构信息

Department of Electrical Engineering, Sejong University, Seoul 05006, Republic of Korea.

School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City 44919, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2020 Jul 15;12(28):32154-32162. doi: 10.1021/acsami.0c06851. Epub 2020 Jul 1.

DOI:10.1021/acsami.0c06851
PMID:32551519
Abstract

Silver nanowire (AgNW) electrodes attract significant attention in flexible and transparent optoelectronic devices; however, high-resolution patterning of AgNW electrodes remains a considerable challenge. In this study, we have introduced a simple technique for high-resolution solution patterning of AgNW networks, based on simple filtration of AgNW solution on a patterned polyimide shadow mask. This solution process allows the smallest pattern size of AgNW electrodes, down to a width of 3.5 μm. In addition, we have demonstrated the potential of these patterned AgNW electrodes for applications in flexible optoelectronic devices, such as photodetectors. Specifically, for flexible and semitransparent UV photodetectors, AgNW electrodes are embedded in sputtered ZnO films to enhance the photocurrent by light scattering and trapping, which resulted in a significantly enhanced photocurrent (up to 800%) compared to devices based on AgNW electrodes mounted on top of ZnO films. In addition, our photodetector could be operated well under extremely bent conditions (bending radius of approximately 770 μm) and provide excellent durability even after 500 bending cycles.

摘要

银纳米线(AgNW)电极在柔性和透明光电器件中备受关注;然而,AgNW电极的高分辨率图案化仍然是一个相当大的挑战。在本研究中,我们基于在图案化聚酰亚胺阴影掩模上对AgNW溶液进行简单过滤,引入了一种用于AgNW网络高分辨率溶液图案化的简单技术。这种溶液工艺可实现AgNW电极的最小图案尺寸,低至3.5μm的宽度。此外,我们展示了这些图案化AgNW电极在柔性光电器件(如光电探测器)中的应用潜力。具体而言,对于柔性和半透明紫外光电探测器,AgNW电极嵌入溅射的ZnO薄膜中,通过光散射和捕获来增强光电流,与基于安装在ZnO薄膜顶部的AgNW电极的器件相比,这导致光电流显著增强(高达800%)。此外,我们的光电探测器在极端弯曲条件下(弯曲半径约为770μm)仍能良好运行,即使经过500次弯曲循环也能提供出色的耐久性。

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