Liu Junliang, Li Xiao, Wang Han, Yuan Guang, Suvorova Alexandra, Gain Sarah, Ren Yongling, Lei Wen
Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley 6009, Australia.
College of Information Science and Engineering, Ocean University of China, Qingdao 266100, China.
ACS Appl Mater Interfaces. 2020 Jul 15;12(28):31810-31822. doi: 10.1021/acsami.0c07847. Epub 2020 Jul 6.
This work demonstrates a controlled van der Waals growth of two-dimensional SnTe nanoplates on mica substrates and their applications in flexible near-infrared photodetectors. The growth of nonlayered rock-salt structured SnTe crystals into two-dimensional SnTe nanoplate structures is mainly caused by the two-dimensional nature of the mica surface, which also results in the ultrathin nanoplates obtained (3.6 nm, equivalent to 6 monolayers). Furthermore, it is found that the shape of the SnTe nanoplates can be well engineered by changing their growth temperature due to the competition between the surface energy of the {100} crystallographic plane and that of the {111} plane. As a result of the favorable physical properties of topological crystalline insulators such as metallic surface (high electron mobility) and narrow bandgap, near-infrared photodetectors based on single SnTe nanoplate with the thickness of 3.6 nm present excellent device performance with a responsivity of 698 mA/W, a specific detectivity of 3.89 × 10 jones, and an external quantum efficiency of 88.5% under the illumination of a 980 nm laser at room temperature (300 K) without applying a gate voltage (). Upon increasing the gate voltage from -30 to 30 V, the detector responsivity increases from 2.96 to 723 mA/W and the detector detectivity increases from 2.4 × 10 to 5.3 × 10 jones. Furthermore, upon increasing the thickness of SnTe nanoplate from 3.6 to 35 nm, the detector responsivity increases from 0.698 to 1.468 A/W. The device performance measured after bending for 300 times as well as after bending with different radii presents no obvious degradation, which exhibits the excellent flexibility of the SnTe nanoplate detectors. These results not only contribute to a deep understanding of the mechanisms of the van der Waals growth of nonlayered materials into two-dimensional structure but also demonstrate the immense potential of SnTe nanoplates to be used in flexible near-infrared detectors.
这项工作展示了在云母衬底上二维SnTe纳米片的可控范德华生长及其在柔性近红外光电探测器中的应用。非层状岩盐结构的SnTe晶体生长成二维SnTe纳米片结构主要是由云母表面的二维性质导致的,这也使得获得了超薄纳米片(3.6纳米,相当于6个单层)。此外,由于{100}晶面和{111}晶面的表面能之间的竞争,发现通过改变生长温度可以很好地控制SnTe纳米片的形状。由于拓扑晶体绝缘体具有诸如金属表面(高电子迁移率)和窄带隙等良好的物理性质,基于厚度为3.6纳米的单个SnTe纳米片的近红外光电探测器在室温(300K)下980纳米激光照射且不施加栅极电压时呈现出优异的器件性能,响应度为698 mA/W,比探测率为3.89×10琼斯,外部量子效率为88.5%。当栅极电压从 -30V增加到30V时,探测器响应度从2.96 mA/W增加到723 mA/W,探测器比探测率从2.4×10增加到5.3×10琼斯。此外,当SnTe纳米片的厚度从3.6纳米增加到35纳米时,探测器响应度从0.698 A/W增加到1.468 A/W。在弯曲300次以及不同半径弯曲后测量的器件性能没有明显下降,这展示了SnTe纳米片探测器优异的柔韧性。这些结果不仅有助于深入理解非层状材料范德华生长成二维结构的机制,还证明了SnTe纳米片在柔性近红外探测器中应用的巨大潜力。