Kumar Rachana, Kushvaha Sunil Singh, Kumar Mahesh, Kumar Muthusamy Senthil, Gupta Govind, Kandpal Kavindra, Kumar Pramod
Photovoltaic Metrology Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi, 110012, India.
2D Physics and QHR Metrology Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi, 110012, India.
Sci Rep. 2020 Jun 26;10(1):10480. doi: 10.1038/s41598-020-67531-3.
We report the band gap tuning and facilitated charge transport at perylenediimide (PDI)/GaN interface in organic-inorganic hybrid nanostructure system over flexible titanium (Ti) foil. Energy levels of the materials perfectly align and facilitate high efficiency charge transfer from electron rich n-GaN to electron deficient PDI molecules. Proper interface formation resulted in band gap tuning as well as facilitated electron transport as evident in I-V characteristics. Growth of PDI/GaN hybrid system with band gap tuning from ultra-violet to visible region and excellent electrical properties open up new paradigm for fabrication of efficient optoelectronics devices on flexible substrates.
我们报道了在柔性钛(Ti)箔上的有机-无机杂化纳米结构系统中,苝二亚胺(PDI)/氮化镓(GaN)界面处的带隙调谐和电荷传输促进。材料的能级完美对齐,促进了从富电子的n型GaN到缺电子的PDI分子的高效电荷转移。如I-V特性所示,适当的界面形成导致了带隙调谐以及电子传输促进。具有从紫外到可见光区域的带隙调谐和优异电学性能的PDI/GaN杂化系统的生长,为在柔性基板上制造高效光电器件开辟了新的范例。