具有高效非辐射能量转移的 III 族氮化物/有机半导体混合纳米结构，用于白光发射器。

Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters.

机构信息

Department of Electronic and Electrical Engineering, University of Sheffield , Mappin Street, S1 3JD, Sheffield, United Kingdom.

出版信息

Nano Lett. 2013 Jul 10;13(7):3042-7. doi: 10.1021/nl400597d. Epub 2013 Jun 26.

DOI:10.1021/nl400597d

PMID:23795609

Abstract

A novel hybrid inorganic/organic semiconductor nanostructure has been developed, leading to very efficient nonradiative resonant-energy-transfer (RET) between blue emitting InGaN/GaN multiple quantum wells (MQWs) and a yellow light emitting polymer. The utilization of InGaN/GaN nanorod arrays allows for both higher optical performance of InGaN blue emission and a minimized separation between the InGaN/GaN MQWs and the emitting polymer as a color conversion medium. A significant reduction in decay lifetime of the excitons in the InGaN/GaN MQWs of the hybrid structure has been observed as a result of the nonradiative RET from the nitride emitter to the yellow polymer. A detailed calculation has demonstrated that the efficiency of the nonradiative RET is as high as 73%. The hybrid structure exhibits an extremely fast nonradiative RET with a rate of 0.76 ns(-1), approximately three times higher than the InGaN/GaN MQW nonradiative decay rate of 0.26 ns(-1). It means that the RET dominates the nonradiative processes in the nitride quantum well structure, which can further enhance the overall device performance.

摘要

一种新型的混合无机/有机半导体纳米结构已经被开发出来，这导致了在蓝色发射的 InGaN/GaN 多量子阱（MQWs）和黄色发光聚合物之间非常有效的非辐射共振能量转移（RET）。利用 InGaN/GaN 纳米棒阵列可以提高 InGaN 蓝色发射的光学性能，并使 InGaN/GaN MQWs 和作为颜色转换介质的发光聚合物之间的分离最小化。由于氮化物发射器到黄色聚合物的非辐射 RET，混合结构中 InGaN/GaN MQWs 中的激子的衰减寿命显著降低。详细的计算表明，非辐射 RET 的效率高达 73％。该混合结构表现出非常快速的非辐射 RET，速率为 0.76 ns(-1)，大约比 InGaN/GaN MQW 的非辐射衰减速率 0.26 ns(-1)高 3 倍。这意味着 RET 主导了氮化物量子阱结构中的非辐射过程，这可以进一步提高整体器件性能。