Kim Taeyoon, Son Heerak, Kim Inho, Kim Jaewook, Lee Suyoun, Park Jong Keuk, Kwak Joon Young, Park Jongkil, Jeong YeonJoo
Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, South Korea.
Sci Rep. 2020 Jul 9;10(1):11247. doi: 10.1038/s41598-020-68211-y.
We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive filament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior.
我们报道了一种基于钽氧化物的电阻式开关存储器件中的互补电阻开关（CRS）行为，该器件可根据操作（合规电流）和制造（氧清除层厚度）条件，在单个存储单元中在双极开关（BRS）和CRS之间可逆地改变其开关模式。此外，通过电学和光学测量研究了开关模式转变的起源，其中电导率被认为由两个因素决定：导电细丝的形成和肖特基势垒的调制。这一结果有助于设计具有理想且稳定开关行为的电阻式开关器件。
