Kim Daewoo, Lee Jeongwoo, Kim Jaeyeon, Sohn Hyunchul
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea.
Materials (Basel). 2023 Jul 14;16(14):4992. doi: 10.3390/ma16144992.
The resistive random-access memory (RRAM) with multi-level storage capability has been considered one of the most promising emerging devices to mimic synaptic behavior and accelerate analog computations. In this study, we investigated the reset-first bipolar resistive switching (RS) and multi-level characteristics of a LaNiO thin film deposited using a reactive magnetron co-sputtering method. Polycrystalline phases of LaNiO (LNO), without LaO and NiO phases, were observed at similar fractions of Ni and La at a constant partial pressure of oxygen. The relative chemical proportions of Ni and Ni ions in LaNiO indicated that it was an oxygen-deficient LaNiO thin film, exhibiting RS behavior, compared to LNO without Ni ions. The TiN/LaNiO/Pt devices exhibited gradual resistance changes under various DC/AC voltage sweeps and consecutive pulse modes. The nonlinearity values of the conductance, measured via constant-pulse programming, were 0.15 for potentiation and 0.35 for depression, indicating the potential of the as-fabricated devices as analog computing devices. The LaNiO-based device could reach multi-level states without an electroforming step and is a promising candidate for state-of-the-art RS memory and synaptic devices for neuromorphic computing.
具有多级存储能力的电阻式随机存取存储器（RRAM）被认为是最有前途的新兴器件之一，可用于模拟突触行为并加速模拟计算。在本研究中，我们研究了采用反应磁控共溅射法沉积的LaNiO薄膜的先复位双极电阻开关（RS）和多级特性。在恒定氧分压下，当Ni和La的比例相似时，观察到了无LaO和NiO相的LaNiO（LNO）多晶相。与无Ni离子的LNO相比，LaNiO中Ni和Ni离子的相对化学比例表明它是一种缺氧的LaNiO薄膜，表现出RS行为。TiN/LaNiO/Pt器件在各种直流/交流电压扫描和连续脉冲模式下呈现出逐渐的电阻变化。通过恒脉冲编程测量的电导非线性值，增强时为0.15，抑制时为0.35，表明所制备的器件作为模拟计算器件的潜力。基于LaNiO的器件无需电形成步骤即可达到多级状态，是用于神经形态计算的最先进RS存储器和突触器件的有前途的候选者。
