Zhang Xiang, Chen Zhaolong, Chang Hongliang, Yan Jianchang, Yang Shenyuan, Wang Junxi, Gao Peng, Wei Tongbo
State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science.
Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University.
J Vis Exp. 2020 Jun 25(160). doi: 10.3791/60167.
This protocol demonstrates a method for graphene-assisted quick growth and coalescence of AlN on nano-pattened sapphire substrate (NPSS). Graphene layers are directly grown on NPSS using catalyst-free atmospheric-pressure chemical vapor deposition (APCVD). By applying nitrogen reactive ion etching (RIE) plasma treatment, defects are introduced into the graphene film to enhance chemical reactivity. During metal-organic chemical vapor deposition (MOCVD) growth of AlN, this N-plasma treated graphene buffer enables AlN quick growth, and coalescence on NPSS is confirmed by cross-sectional scanning electron microscopy (SEM). The high quality of AlN on graphene-NPSS is then evaluated by X-ray rocking curves (XRCs) with narrow (0002) and (10-12) full width at half-maximum (FWHM) as 267.2 arcsec and 503.4 arcsec, respectively. Compared to bare NPSS, AlN growth on graphene-NPSS shows significant reduction of residual stress from 0.87 GPa to 0.25 Gpa, based on Raman measurements. Followed by AlGaN multiple quantum wells (MQWS) growth on graphene-NPSS, AlGaN-based deep ultraviolet light-emitting-diodes (DUV LEDs) are fabricated. The fabricated DUV-LEDs also demonstrate obvious, enhanced luminescence performance. This work provides a new solution for the growth of high quality AlN and fabrication of high performance DUV-LEDs using a shorter process and less costs.
本协议展示了一种在纳米图案蓝宝石衬底（NPSS）上通过石墨烯辅助实现AlN快速生长和合并的方法。使用无催化剂常压化学气相沉积（APCVD）在NPSS上直接生长石墨烯层。通过施加氮反应离子蚀刻（RIE）等离子体处理，在石墨烯薄膜中引入缺陷以增强化学反应性。在AlN的金属有机化学气相沉积（MOCVD）生长过程中，这种经过N等离子体处理的石墨烯缓冲层使AlN能够快速生长，并且通过截面扫描电子显微镜（SEM）确认了其在NPSS上的合并。然后通过X射线摇摆曲线（XRC）评估石墨烯 - NPSS上AlN的高质量，其（0002）和（10 - 12）的半高宽（FWHM）分别为267.2弧秒和503.4弧秒。基于拉曼测量，与裸NPSS相比，在石墨烯 - NPSS上生长的AlN的残余应力从0.87 GPa显著降低至0.25 GPa。在石墨烯 - NPSS上生长AlGaN多量子阱（MQW）之后，制造了基于AlGaN的深紫外发光二极管（DUV LED）。所制造的DUV - LED也表现出明显增强的发光性能。这项工作为使用更短工艺和更低成本生长高质量AlN以及制造高性能DUV - LED提供了一种新的解决方案。
