International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan.
Department of Creative Engineering, National Institute of Technology, Tsuruoka College, 104 Sawada, Inooka, Tsuruoka, Yamagata 997-8511, Japan.
ACS Comb Sci. 2020 Sep 14;22(9):433-439. doi: 10.1021/acscombsci.0c00033. Epub 2020 Jul 27.
The correlation between the crystal structure and valence band structure of a (GaIn)O solid solution system was investigated by using combinatorial synthesis. At a low Ga content of (GaIn)O with a single-phase cubic InO crystal structure, a surface electron accumulation layer (SEAL), which is an important electrical phenomenon in InO, was confirmed. When the Ga content increased to approximately = 0.4, mixed crystal structures of GaO and InO were produced. Above = 0.5, the dominant valence band structure was attributed to GaO, the SEAL disappeared, and the sheet resistance increased greatly by 5 orders of magnitude or more. The in-gap state and valence band structure of the (GaIn)O solid solution system were strongly affected by GaO; however, the valence band maximum position shifted to a higher binding energy.
通过组合合成研究了（GaIn）O 固溶体系的晶体结构和价带结构之间的相关性。在 Ga 含量较低的（GaIn）O 中，具有单相立方 InO 晶体结构，证实了表面电子积累层（SEAL），这是 InO 中的一个重要电现象。当 Ga 含量增加到约 = 0.4 时，会产生 GaO 和 InO 的混合晶体结构。高于 = 0.5 时，主导价带结构归因于 GaO，SEAL 消失，片电阻增加了 5 个数量级或更多。（GaIn）O 固溶体系的带隙态和价带结构受 GaO 强烈影响；然而，价带顶位置向更高的结合能移动。
