Morgan Timothy A, Rudie Justin, Zamani-Alavijeh Mohammad, Kuchuk Andrian V, Orishchin Nazar, Alema Fikadu, Osinsky Andrei, Sleezer Robert, Salamo Gregory, Ware Morgan E
Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, Arkansas 72701, United States.
Naval Surface Warfare Center Crane, 300 HWY 361, Crane, Indiana 47522, United States.
ACS Appl Mater Interfaces. 2022 Jul 27;14(29):33944-33951. doi: 10.1021/acsami.2c04177. Epub 2022 Jul 18.
The band offsets for the β-(AlGa)O/β-GaO (010) heterojunction have been experimentally measured by X-ray photoelectron spectroscopy. High-quality β-(AlGa)O films were grown by metal-organic chemical vapor deposition for characterization. The indirect band gap of β-(AlGa)O was determined by optical transmission to be 4.69 ± 0.03 eV with a direct transition of 5.37 ± 0.03 eV, while β-GaO was confirmed to have an indirect band gap of 4.52 ± 0.03 eV with a direct transition of 4.94 ± 0.03 eV. The resulting band alignment at the heterojunction was determined to be of type II with the valence and conduction band edges of β-(AlGa)O being -0.26 ± 0.08 and 0.43 ± 0.08 eV, respectively, above those of β-GaO (010). These values can now be used to help better design and predict the performance of β-(AlGa)O heterojunction-based devices.
通过X射线光电子能谱对β-(AlGa)O/β-GaO(010)异质结的能带偏移进行了实验测量。采用金属有机化学气相沉积法生长高质量的β-(AlGa)O薄膜用于表征。通过光透射确定β-(AlGa)O的间接带隙为4.69±0.03 eV，直接跃迁为5.37±0.03 eV，而β-GaO被证实具有4.52±0.03 eV的间接带隙和4.94±0.03 eV的直接跃迁。确定异质结处的能带排列为II型，β-(AlGa)O的价带和导带边缘分别比β-GaO(010)的价带和导带边缘高-0.26±0.08和0.43±0.08 eV。这些值现在可用于帮助更好地设计和预测基于β-(AlGa)O异质结的器件的性能。
