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氢钝化硅上并五苯超薄膜的生长

Tetracene Ultrathin Film Growth on Hydrogen-Passivated Silicon.

作者信息

Niederhausen Jens, MacQueen Rowan W, Lips Klaus, Aldahhak Hazem, Schmidt Wolf Gero, Gerstmann Uwe

机构信息

Department ASPIN, Helmholtz-Zentrum Berlin für Materialen und Energie GmbH, Berlin, Germany.

Lehrstuhl für Theoretische Materialphysik, Universität Paderborn, 33095 Paderborn, Germany.

出版信息

Langmuir. 2020 Aug 11;36(31):9099-9113. doi: 10.1021/acs.langmuir.0c01154. Epub 2020 Jul 30.

Abstract

Inorganic-organic interfaces are important for enhancing the power conversion efficiency of silicon-based solar cells through singlet exciton fission (SF). We elucidated the structure of the first monolayers of tetracene (Tc), an SF molecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphous Si (a-Si:H) by combining near-edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS) experiments with density functional theory (DFT) calculations. For samples grown at or below substrate temperatures of 265 K, the resulting ultrathin Tc films are dominated by almost upright-standing molecules. The molecular arrangement is very similar to the Tc bulk phase, with only a slightly higher average angle between the conjugated molecular plane normal and the surface normal (α) around 77°. Judging from carbon K-edge X-ray absorption spectra, the orientation of the Tc molecules are almost identical when grown on H-Si(111) and a-Si:H substrates as well as for (sub)mono- to several-monolayer coverages. Annealing to room temperature, however, changes the film structure toward a smaller α of about 63°. A detailed DFT-assisted analysis suggests that this structural transition is correlated with a lower packing density and requires a well-chosen amount of thermal energy. Therefore, we attribute the resulting structure to a distinct monolayer configuration that features less inclined, but still well-ordered molecules. The larger overlap with the substrate wave functions makes this arrangement attractive for an optimized interfacial electron transfer in SF-assisted silicon solar cells.

摘要

无机-有机界面对于通过单线态激子裂变(SF)提高硅基太阳能电池的功率转换效率至关重要。我们通过将近边X射线吸收精细结构(NEXAFS)和X射线光电子能谱(XPS)实验与密度泛函理论(DFT)计算相结合,阐明了并四苯(Tc,一种SF分子)在氢钝化的Si(111) [H-Si(111)]和氢化非晶硅(a-Si:H)上的首个单分子层的结构。对于在265 K或更低衬底温度下生长的样品,所得的超薄Tc薄膜主要由几乎直立的分子组成。分子排列与Tc体相非常相似,共轭分子平面法线与表面法线之间的平均夹角(α)略高,约为77°。从碳K边X射线吸收光谱判断,当在H-Si(111)和a-Si:H衬底上生长以及对于(亚)单层到多层覆盖时,Tc分子的取向几乎相同。然而,退火至室温会使薄膜结构向约63°的较小α转变。详细的DFT辅助分析表明,这种结构转变与较低的堆积密度相关,并且需要适量的热能。因此,我们将所得结构归因于一种独特的单分子层构型,其特征是分子倾斜度较小,但仍排列有序。与衬底波函数的更大重叠使得这种排列对于SF辅助硅太阳能电池中优化的界面电子转移具有吸引力。

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