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铜(II)和铜(I)配位聚合物异质结构薄膜中的新兴界面

Emergent Interface in Heterostructured Thin Films of Cu(II) and Cu(I) Coordination Polymers.

作者信息

Sindhu Pooja, Prasoon Anupam, Rana Shammi, Ballav Nirmalya

机构信息

Department of Chemistry, Indian Institute of Science Education and Research (IISER), Dr. Homi Bhabha Road, Pune 411 008, India.

出版信息

J Phys Chem Lett. 2020 Aug 6;11(15):6242-6248. doi: 10.1021/acs.jpclett.0c01735. Epub 2020 Jul 22.

Abstract

In this work we report fabrication of high-quality AB- and BA-type heterostructured thin films of cubic Cu(II) (A-type) and tetragonal Cu(I) (B-type) coordination polymers (CPs) on the functionalized Au substrate by the layer-by-layer method. Successful growth of Cu(I)-CP on top of Cu(II)-CP was assigned to be due to the interfacial reduction reaction (IRR). Notably, electrical transport measurements across AB- and BA-type heterostructured thin films revealed rectification of current in opposite directions. We have attributed such an interestingly new observation to the formation of a well-defined interface of Cu(II)-CP and Cu(I)-CP resembling a p-n junction-a hitherto unreported phenomenon that is anticipated to open enormous opportunities for the heterostructured thin films of CPs, likewise celebrated interfaces of oxide heterostructures.

摘要

在本工作中,我们报道了通过逐层法在功能化金衬底上制备高质量的立方Cu(II)(A型)和四方Cu(I)(B型)配位聚合物(CPs)的AB型和BA型异质结构薄膜。Cu(I)-CP在Cu(II)-CP之上的成功生长归因于界面还原反应(IRR)。值得注意的是,对AB型和BA型异质结构薄膜的电输运测量揭示了电流在相反方向上的整流。我们将这一有趣的新观察结果归因于形成了类似于p-n结的Cu(II)-CP和Cu(I)-CP的明确界面——这是一种迄今未报道的现象,预计将为CPs的异质结构薄膜带来巨大机遇,类似于备受关注的氧化物异质结构界面。

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