Li Lei, Chang Kuan-Chang, Lin Xinnan, Lai Ying-Chih, Zhang Rui, Kuo Tze-Peng
School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China.
Department of Materials Science and Engineering, Research Center for Sustainable Energy and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan.
Nanoscale. 2020 Jul 30;12(29):15721-15724. doi: 10.1039/d0nr04053c.
This study investigates the physical and chemical mechanisms during the resistive switching process by means of obtaining the activation energy in the reaction procedure. From the electrochemical and electrical measurement analysis results of HfO2-based resistive random access memory (RRAM), it can be observed that the chemical reaction during the reset process is consistent with the first-order reaction law. The activation energy, Ea, is determined from the reaction rate constant k under a varying-temperature environment in the reset process. The whole reset chemical reaction process can be divided into five phases involving N-O bond breaking, O-O bond breaking and triple-step oxygen ion migration. The methodology of the activation energy determination carried out in this study showcases a distinct approach to elucidate the resistive switching mechanism of RRAM and offers insight into RRAM design for future potential application.
本研究通过获取反应过程中的活化能来研究电阻开关过程中的物理和化学机制。从基于HfO2的电阻式随机存取存储器（RRAM）的电化学和电学测量分析结果可以看出，复位过程中的化学反应符合一级反应定律。在复位过程中，通过在变温环境下的反应速率常数k来确定活化能Ea。整个复位化学反应过程可分为五个阶段，包括N-O键断裂、O-O键断裂和三步氧离子迁移。本研究中进行的活化能测定方法展示了一种独特的方法来阐明RRAM的电阻开关机制，并为RRAM未来潜在应用的设计提供了见解。
