Chen Kai-Huang, Cheng Chien-Min, Kao Ming-Cheng, Kao Yun-Han, Lin Shen-Feng
Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Kaohsiung 83347, Taiwan.
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710301, Taiwan.
Micromachines (Basel). 2024 Sep 12;15(9):1143. doi: 10.3390/mi15091143.
In this study, BaSrTiMnO ceramics were fabricated by a novel ball milling technique followed by spin-coating to produce thin-film resistive memories. Measurements were made using field emission scanning electron microscopes, atomic force microscopes, X-ray diffractometers, and precision power meters to observe, analyze, and calculate surface microstructures, roughness, crystalline phases, half-height widths, and memory characteristics. Firstly, the effect of different sintering methods with different substitution ratios of Mn for Ti was studied. The surface microstructural changes of the films prepared by the one-time sintering method were compared with those of the solid-state reaction method, and the effects of substituting a small amount of Ti with Mn on the physical properties were analyzed. Finally, the optimal parameters obtained in the first part of the experiment were used for the fabrication of the thin-film resistive memory devices. The voltage and current characteristics, continuous operation times, conduction mechanisms, activation energies, and hopping distances of two types of thin-film resistive memory devices, BST and BSTM, were measured and studied under different compliance currents.
在本研究中，采用一种新颖的球磨技术制备BaSrTiMnO陶瓷，随后通过旋涂法制备薄膜电阻存储器。使用场发射扫描电子显微镜、原子力显微镜、X射线衍射仪和精密功率计进行测量，以观察、分析和计算表面微观结构、粗糙度、晶相、半高宽和存储特性。首先，研究了不同烧结方法以及不同Mn对Ti替代率的影响。将一次性烧结法制备的薄膜的表面微观结构变化与固态反应法制备的薄膜进行比较，并分析用Mn少量替代Ti对物理性能的影响。最后，将实验第一部分获得的最佳参数用于制造薄膜电阻存储器件。在不同的顺从电流下测量并研究了两种类型的薄膜电阻存储器件BST和BSTM的电压和电流特性、连续运行时间、传导机制、激活能和跳跃距离。
