Lee Jongmin, Yoon Hongji, Choi Kyoung Soon, Kim Seungkyu, Seo Sehun, Song Jaesun, Choi Byeong-Uk, Ryu Jiseung, Ryu Sangwoo, Oh Jihun, Jeon Cheolho, Lee Sanghan
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea.
National Research Facilities and Equipment Center, Korea Basic Science Institute, Daejeon, 34133, Republic of Korea.
Small. 2020 Oct;16(39):e2002429. doi: 10.1002/smll.202002429. Epub 2020 Jul 19.
To develop strategies for efficient photo-electrochemical water-splitting, it is important to understand the fundamental properties of oxide photoelectrodes by synthesizing and investigating their single-crystal thin films. However, it is challenging to synthesize high-quality single-crystal thin films from copper-based oxide photoelectrodes due to the occurrence of significant defects such as copper or oxygen vacancies and grains. Here, the CuBi O (CBO) single-crystal thin film photocathode is achieved using a NiO template layer grown on single-crystal SrTiO (STO) (001) substrate via pulsed laser deposition. The NiO template layer plays a role as a buffer layer of large lattice mismatch between CBO and STO (001) substrate through domain-matching epitaxy, and forms a type-II band alignment with CBO, which prohibits the transfer of photogenerated electrons toward bottom electrode. The photocurrent densities of the CBO single-crystal thin film photocathode demonstrate -0.4 and -0.7 mA cm at even 0 V with no severe dark current under illumination in a 0.1 m potassium phosphate buffer solution without and with H O as an electron scavenger, respectively. The successful synthesis of high-quality CBO single-crystal thin film would be a cornerstone for the in-depth understanding of the fundamental properties of CBO toward efficient photo-electrochemical water-splitting.
为了制定高效光电化学水分解的策略,通过合成和研究其单晶薄膜来了解氧化物光电极的基本特性非常重要。然而,由于存在诸如铜或氧空位以及晶粒等显著缺陷,从铜基氧化物光电极合成高质量的单晶薄膜具有挑战性。在此,通过脉冲激光沉积在单晶SrTiO(STO)(001)衬底上生长的NiO模板层制备出了CuBiO(CBO)单晶薄膜光阴极。NiO模板层通过畴匹配外延起到了CBO与STO(001)衬底之间大晶格失配的缓冲层作用,并与CBO形成II型能带排列,这阻止了光生电子向底部电极的转移。在0.1 m磷酸钾缓冲溶液中,分别在没有和有H₂O作为电子清除剂的光照条件下,CBO单晶薄膜光阴极的光电流密度在0 V时分别显示为-0.4和-0.7 mA cm²,且无严重暗电流。高质量CBO单晶薄膜的成功合成将成为深入了解CBO用于高效光电化学水分解基本特性的基石。