Paulus Andreas, Hendrickx Mylène, Bercx Marnik, Karakulina Olesia M, Kirsanova Maria A, Lamoen Dirk, Hadermann Joke, Abakumov Artem M, Van Bael Marlies K, Hardy An
Hasselt University, Institute for Materials Research (imo-imomec) and imec, division imomec, Partner in EnergyVille, DESINe team, Agoralaan Gebouw D, 3590 Diepenbeek, Belgium.
Dalton Trans. 2020 Aug 14;49(30):10486-10497. doi: 10.1039/d0dt01047b. Epub 2020 Jul 20.
Layered Li-rich/Mn-rich NMC (LMR-NMC) is characterized by high initial specific capacities of more than 250 mA h g, lower cost due to a lower Co content and higher thermal stability than LiCoO. However, its commercialisation is currently still hampered by significant voltage fade, which is caused by irreversible transition metal ion migration to emptied Li positions via tetrahedral interstices upon electrochemical cycling. This structural change is strongly correlated with anionic redox chemistry of the oxygen sublattice and has a detrimental effect on electrochemical performance. In a fully charged state, up to 4.8 V vs. Li/Li, Mn is prone to migrate to the Li layer. The replacement of Mn for an isovalent cation such as Sn which does not tend to adopt tetrahedral coordination and shows a higher metal-oxygen bond strength is considered to be a viable strategy to stabilize the layered structure upon extended electrochemical cycling, hereby decreasing voltage fade. The influence of Sn on the voltage fade in partially charged LMR-NMC is not yet reported in the literature, and therefore, we have investigated the structure and the corresponding electrochemical properties of LMR-NMC with different Sn concentrations. We determined the substitution limit of Sn in LiNiCoMnSnO by powder X-ray diffraction and transmission electron microscopy to be x≈ 0.045. The limited solubility of Sn is subsequently confirmed by density functional theory calculations. Voltage fade for x = 0 and x = 0.027 has been comparatively assessed within the 3.00 V-4.55 V (vs. Li/Li) potential window, from which it is concluded that replacing Mn by Sn cannot be considered as a viable strategy to inhibit voltage fade within this window, at least with the given restricted doping level.
层状富锂/富锰镍锰钴氧化物(LMR-NMC)的特点是初始比容量高,超过250 mA h/g,钴含量较低使得成本更低,且热稳定性高于钴酸锂。然而,其商业化目前仍受到显著电压衰减的阻碍,这是由于在电化学循环过程中,过渡金属离子通过四面体间隙不可逆地迁移到空的锂位点而导致的。这种结构变化与氧亚晶格的阴离子氧化还原化学密切相关,对电化学性能有不利影响。在相对于锂/锂高达4.8 V的完全充电状态下,锰易于迁移到锂层。用不易形成四面体配位且金属-氧键强度更高的等价阳离子如锡取代锰,被认为是在长时间电化学循环中稳定层状结构从而降低电压衰减的可行策略。文献中尚未报道锡对部分充电的LMR-NMC中电压衰减的影响,因此,我们研究了不同锡浓度的LMR-NMC的结构和相应的电化学性能。我们通过粉末X射线衍射和透射电子显微镜确定了LiNiCoMnSnO中锡的取代极限为x≈0.045。随后通过密度泛函理论计算证实了锡的有限溶解度。在3.00 V - 4.55 V(相对于锂/锂)的电位窗口内,对x = 0和x = 0.027的电压衰减进行了比较评估,由此得出结论,至少在给定的受限掺杂水平下,用锡取代锰不能被视为抑制该窗口内电压衰减的可行策略。