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钴/铂界面处的应变增强Dzyaloshinskii-Moriya相互作用。

Strain-enhanced Dzyaloshinskii-Moriya interaction at Co/Pt interfaces.

作者信息

Deger Caner

机构信息

Department of Physics, Marmara University, 34722, Ziverbey, Istanbul, Turkey.

出版信息

Sci Rep. 2020 Jul 23;10(1):12314. doi: 10.1038/s41598-020-69360-w.

Abstract

The interfacial Dzyaloshinskii-Moriya interaction (DMI) is an essential ingredient for stabilizing chiral spin configurations in spintronic applications. Here, via first-principles calculations, we reveal the influence of lattice strain on DMI in Co/Pt interface. We observed a considerable enhancement for a certain lattice strain. Furthermore, a direct correlation is established between the DMI and interlayer distances dominated by the strain, which is attributed to a hybridization of electronic orbitals. This hybridization has also been presented as the microscopic origin of the interfacial DMI. We anticipate that our predictions provide new insights into the control of interfacial DMI for skyrmion-based spintronic devices.

摘要

界面Dzyaloshinskii-Moriya相互作用(DMI)是自旋电子学应用中稳定手性自旋构型的关键因素。在此,通过第一性原理计算,我们揭示了晶格应变对Co/Pt界面DMI的影响。我们观察到在特定晶格应变下DMI有显著增强。此外,还建立了DMI与由应变主导的层间距离之间的直接关联,这归因于电子轨道的杂化。这种杂化也被认为是界面DMI的微观起源。我们预计,我们的预测为基于斯格明子的自旋电子器件中界面DMI的控制提供了新的见解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/64bd/7378838/5d4f66a5e2c3/41598_2020_69360_Fig1_HTML.jpg

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